Semiconductor Gate Voltage Control for Junction Temperature Matching
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Solution Overview
Problem
In power semiconductor modules, individual semiconductors often operate within different temperature ranges due to manufacturing tolerances and design variations, leading to inefficiencies and reduced service life.
Innovation Solution
A method and device for adapting the gate voltages of semiconductor components to match their junction temperatures to a reference temperature, thereby minimizing temperature deviations and optimizing power loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductors are interconnected in parallel to increase current capacity, then productivity and efficiency are improved, but temperature deviations between individual semiconductors worsen due to manufacturing tolerances and design variations
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the gate voltage of each semiconductor component based on its individual temperature measurement. This allows each parallel-connected semiconductor to operate at optimized voltage levels that compensate for manufacturing tolerances and design variations, thereby reducing temperature deviations while maintaining high current capacity
Solution Approach 2:
The patent implements a feedback mechanism where temperature sensors continuously monitor the junction temperature of each semiconductor, and this temperature information is fed back to the control unit which adjusts the gate voltage accordingly. This closed-loop control ensures that temperature deviations are actively compensated, allowing parallel-connected semiconductors to operate efficiently without excessive temperature variations
2Reliability
If design margins are increased to account for manufacturing tolerances, then reliability is improved, but manufacturing costs and component utilization worsen
Solution Approach 1:
The patent changes the operating parameters (gate voltage) of each semiconductor based on its actual temperature and characteristics, allowing each component to operate within its optimal range rather than applying conservative design margins to all components. This personalized parameter adjustment maintains reliability while reducing the need for over-engineering and excessive design reserves
Solution Approach 2:
The patent applies local quality by treating each semiconductor component individually with its own temperature measurement and gate voltage control, rather than applying a uniform design margin to all components. This localized approach allows each semiconductor to be optimized for its specific characteristics, improving overall utilization while maintaining reliability
Data Source
AI summary
A method and device for adapting temperatures of semiconductor components. The device includes a first and second semiconductor component, and an evaluation unit. The evaluation unit is configured to ascertain a first and second temperature of the first and second semiconductor component, respectively, calculate a first and second temperature deviation, which represents a deviation of the first and second temperature from a reference temperature, respectively, and adapt a first gate voltage of the first semiconductor component and/or a second gate voltage of the second semiconductor component until the first temperature deviation and the second temperature deviation are smaller than or equal to a predefined maximum allowable temperature deviation from the reference temperature. The adaptation takes place only when a predefined allowable control range for the respective gate voltage is not exceeded, and when the first temperature and/or the second temperature is/are greater than the reference temperature.