Semiconductor Getter Layer Removal Without Silicon Damage
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the removal of metal atoms from a getter layer without damaging the semiconductor layer, as existing methods often result in damage to the semiconductor layer or inefficiencies in the removal process.
Innovation Solution
The method involves forming a getter layer made of a material different from the semiconductor layer, such as a carbon or germanium layer, and using annealing to move metal atoms into this layer, followed by chemical processes to remove the getter layer while preserving the semiconductor layer integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a getter layer is used to remove metal atoms from a semiconductor layer, then metal atom removal is effective, but the getter layer itself becomes difficult to remove without damaging the semiconductor layer
Solution Approach 1:
The patent divides the getter layer into multiple thin sub-layers (first getter layer, second getter layer, third getter layer) with different compositions and removal characteristics. Each sub-layer can be selectively removed at different stages, allowing complete getter layer removal without damaging the semiconductor layer while maintaining effective metal atom removal throughout the process.
Solution Approach 2:
Different portions of the getter layer are given different local qualities through varying material compositions (silicon-rich, carbon-rich, germanium-rich regions). This allows each portion to be removed by different chemical processes targeting specific materials, enabling complete removal without affecting the silicon semiconductor layer.
2Ease of manufacture
If the getter layer is removed using chemical processes, then the getter layer can be removed, but there is a risk of damage to the semiconductor layer
Solution Approach 1:
The getter layer is segmented into multiple sub-layers that can be removed sequentially using different chemical processes. This gradual removal approach allows careful control of each removal step, preventing excessive chemical exposure that could damage the semiconductor layer while ensuring complete getter layer removal.
Solution Approach 2:
The patent uses an oxide layer as an intermediary protective barrier between the chemical removal processes and the semiconductor layer. This oxide layer is formed on the semiconductor surface before getter layer removal and protects the underlying silicon from direct chemical exposure, preventing damage while allowing effective getter layer removal.
3Device complexity
If a single-layer getter structure is used, then the manufacturing process is simple, but the removal process causes damage to the semiconductor layer
Solution Approach 1:
The getter layer is divided into multiple thin sub-layers with different material compositions rather than using a single thick layer. This segmentation increases structural complexity but enables selective removal of each sub-layer using targeted chemical processes, ultimately protecting the semiconductor layer from damage while maintaining manufacturing feasibility.
Solution Approach 2:
The getter layer is constructed as a composite structure with multiple sub-layers having different material compositions (silicon oxide, carbon, germanium oxide, etc.). This composite structure allows each sub-layer to be removed by specific chemical processes that do not affect the other sub-layers or the underlying silicon semiconductor layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for easy and damage-free removal of the getter layer, reducing the risk of leakage currents and improving yield and productivity by minimizing damage to the semiconductor components.
Implementation Method 1
annealing the semiconductor layer to move some of the metal atoms in the semiconductor layer into the first layer
Data Source
AI summary
According to one embodiment, a method of manufacturing a semiconductor device includes forming a semiconductor layer containing a plurality of metal atoms. The method further includes forming a first layer other than a silicon (Si) layer on the semiconductor layer as a layer containing a main component element different from a main component element of the semiconductor layer. The method further includes annealing the semiconductor layer to move some of the metal atoms in the semiconductor layer into the first layer. The method further includes removing the first layer after some of the metal atoms have been moved into the first layer.