Semiconductor Getter Layer Composition for Metal Atom Removal
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Solution Overview
Problem
The existing methods for forming a getter layer in semiconductor devices are inefficient in removing metal atoms from the semiconductor layer, particularly due to challenges in etching selectivity and gettering performance.
Innovation Solution
A method involving the formation of a nitrogen-doped amorphous silicon (N-doped aSi) getter layer with a Si atom to N atom ratio of less than 4/7, which is richer in silicon than a silicon nitride film, is used to transfer and remove metal atoms from the semiconductor layer through thermal treatment and subsequent etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional getter layer is formed to remove metal atoms from the semiconductor layer, then metal atom removal is achieved, but etching selectivity is poor and gettering performance is insufficient
Solution Approach 1:
The patent changes the compositional parameters of the getter layer by controlling the nitrogen content to be less than 4/7 relative to silicon atoms, creating an N-doped amorphous silicon layer with optimized gettering properties while maintaining etching selectivity
Solution Approach 2:
The patent creates a composite structure by doping amorphous silicon with nitrogen atoms to form N-doped aSi, combining the advantages of silicon-based materials with nitrogen-enhanced gettering performance and etching selectivity
2Reliability
If the nitrogen content in the getter layer is increased to improve gettering performance, then metal atom transfer is enhanced, but etching selectivity deteriorates
Solution Approach 1:
The patent optimizes the nitrogen content parameter within a specific range (less than 4/7 ratio of N to Si atoms) to achieve the balance between gettering performance and etching selectivity, avoiding excessive nitrogen that would harm etching selectivity
3Ease of manufacture
If a silicon nitride film is used as the getter layer, then etching selectivity is improved, but gettering performance is reduced
Solution Approach 1:
The patent uses N-doped amorphous silicon as an alternative to silicon nitride, maintaining silicon-based etching selectivity while introducing nitrogen doping to enhance gettering performance, thus avoiding the trade-off present in silicon nitride films
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the etching selectivity and gettering performance, allowing for effective removal of metal atoms from the semiconductor layer, reducing their concentration and improving the manufacturing efficiency of semiconductor devices.
Implementation Method 1
transferred at least some of the metal atoms in the semiconductor layer into the first layer
Implementation Method 2
forming a first layer including a plurality of silicon atoms and a plurality of nitrogen atoms on the semiconductor layer
Data Source
AI summary
In one embodiment, a method of manufacturing a semiconductor device includes forming a semiconductor layer including a plurality of metal atoms on a substrate, and forming a first layer including a plurality of silicon atoms and a plurality of nitrogen atoms on the semiconductor layer. The method further includes transferring at least some of the metal atoms in the semiconductor layer into the first layer. and removing the first layer after transferring the at least some of the metal atoms in the semiconductor layer into the first layer. Furthermore, a ratio of a number of the nitrogen atoms relative to a number of the silicon atoms and the nitrogen atoms in the first layer is smaller than 4/7.