Semiconductor Device Structure Using Transition Metal Chalcogenide and Graphene
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at increasingly smaller sizes due to the complexity and difficulty of fabrication processes as feature sizes decrease, leading to higher contact resistance and reduced performance.
Innovation Solution
A semiconductor device structure is formed using a transition metal chalcogenide semiconductor layer and a graphene layer, with a conductive layer connected to the graphene, and an atomic force microscope anode oxidation process to create a narrow gap between source and drain electrodes, reducing contact resistance and improving mobility and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are decreased to increase functional density, then production efficiency is improved and costs are lowered, but fabrication process difficulty increases and device reliability deteriorates
Solution Approach 1:
The patent changes the material parameter from conventional metals to transition metal chalcogenide (TMDC) and graphene, which fundamentally alters the electrical and mechanical properties of the device. This material substitution enables smaller feature sizes while maintaining or improving device reliability, as TMDC and graphene provide superior electrical characteristics and stability at nanoscale dimensions
Solution Approach 2:
The patent employs a composite structure combining transition metal chalcogenide with graphene layers. This composite material approach leverages the complementary properties of both materials: TMDC provides the semiconductor channel with high electron mobility, while graphene provides excellent electrical contact with low contact resistance, together resolving the reliability issues associated with scaled-down devices
2Length of stationary object
If feature sizes are decreased to increase functional density, then geometric scaling is achieved, but contact resistance increases and performance deteriorates
Solution Approach 1:
The patent changes the contact material parameter from conventional metals to graphene, which has fundamentally different electrical properties. Graphene's high carrier mobility and two-dimensional structure enable it to maintain low contact resistance even at reduced contact areas, directly addressing the contact resistance problem in scaled-down devices
Solution Approach 2:
The patent introduces graphene as an intermediary material between the metal electrode and the TMDC channel. This intermediate layer improves the contact interface by providing better orbital overlap and charge transfer, reducing contact resistance without requiring larger contact dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in lower contact resistance and improved performance of semiconductor devices by utilizing a transition metal chalcogenide and graphene layers, enhancing mobility and reducing channel length, thus addressing the challenges of scaling down in semiconductor fabrication.
Implementation Method 1
an atomic force microscope anode oxidation process to create a narrow gap between source and drain electrodes
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a semiconductor layer over the substrate. The semiconductor layer includes a transition metal chalcogenide. The semiconductor device structure includes a source electrode and a drain electrode over and connected to the semiconductor layer and spaced apart from each other by a gap. The source electrode and the drain electrode are made of graphene.