Semiconductor Device Groove Embedding for Flatness
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Solution Overview
Problem
The existing configuration of semiconductor devices with insulating films and semiconductor elements on substrates complicates the formation of fine structures due to increased height differences, making it difficult to miniaturize and maintain surface flatness.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with an element insulating film and a groove on the front surface, where the semiconductor element is placed within the groove, and a withstand voltage structure is formed outside the active region, allowing for reduced height protrusion and improved surface flatness, enabling miniaturization and increased surface area for fine structure formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor element is formed above an insulating film on the semiconductor substrate, then the semiconductor element can be isolated and electrically insulated, but the height difference on the semiconductor substrate increases
Solution Approach 1:
The semiconductor element is embedded within a groove formed in the element insulating film, creating a nested structure where the element sits inside the insulating film rather than on top of it. This nesting approach maintains electrical insulation while reducing the height difference on the substrate surface.
Solution Approach 2:
Instead of placing the semiconductor element vertically above the substrate surface, the element is positioned horizontally within a groove at the same level as the substrate surface. This dimensional repositioning eliminates height difference while preserving the insulating function.
2Volume of moving object
If the height difference on the semiconductor substrate is made larger, then more space is available for semiconductor elements, but it becomes difficult to form fine structures near the portions having height difference
Solution Approach 1:
By nesting the semiconductor element within the element insulating film groove, the structure maintains a flat outer surface that allows fine structures to be formed nearby, while the internal volume of the groove provides sufficient space for the semiconductor element.
Solution Approach 2:
The element insulating film is formed with different properties in different regions: a groove region that accommodates the semiconductor element and a flat region that enables fine structure formation. This local differentiation allows both requirements to be satisfied simultaneously.
3Adaptability or versatility
If separate insulating films are formed for elements and fields, then each can be optimized independently, but manufacturing complexity and cost increase
Solution Approach 1:
The element insulating film and field insulating film are merged into a single insulating film structure. The element insulating film includes both a groove region for semiconductor elements and a flat region for field insulation, eliminating the need for separate insulating films while maintaining independent optimization capabilities through regional differentiation.
Solution Approach 2:
The element insulating film serves multiple functions: it provides electrical insulation for semiconductor elements in the groove region, provides field insulation in the flat region, and maintains a flat surface for fine structure formation. This multi-functionality reduces manufacturing complexity while preserving optimization flexibility.
Data Source
AI summary
To provide a semiconductor device with a high degree of flatness, provided is a semiconductor device including a semiconductor substrate; an element insulating film that is formed on a front surface side of the semiconductor substrate and includes a groove; and a semiconductor element provided in the groove of the element insulating film. The semiconductor device further comprises a withstand voltage structure farther to the outside than the active region, the withstand voltage structure includes a field insulating film formed on the front surface of the semiconductor substrate, and film thickness of a region of the element insulating film where the groove is not provided is the same as film thickness of the field insulating film.