Semiconductor Apparatus Groove Recess Bonding Reliability
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Solution Overview
Problem
Existing semiconductor apparatuses face reliability issues due to interfacial separation and cracking caused by excess bonding material and residual stress, particularly in the absence of plating on groove surfaces, leading to inefficient manufacturing and reduced reliability.
Innovation Solution
A semiconductor apparatus design featuring a base plate with a groove-shape recess along the outer perimeter of the metal plate, where the deeper area of the recess accommodates excess bonding material, preventing it from spreading and providing an anchor effect, thus reducing stress and improving bonding reliability without precise control of bonding material amounts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plating is not performed on groove surfaces to prevent solder from entering, then manufacturing process is simplified, but excess bonding material spreads over the metal plate causing interfacial separation and cracking
Solution Approach 1:
The groove is designed with different depth zones: a first depth region and a deeper second depth region along the outer perimeter. This local variation in groove depth creates different functional zones - the deeper region captures excess bonding material while the shallower region maintains proper bonding, achieving both reliability and ease of manufacture without plating
Solution Approach 2:
The invention converts the harmful effect of excess bonding material spreading into a beneficial anchor effect. By providing a deeper groove region, the excess bonding material is directed to flow into this region where it creates mechanical interlocking with the encapsulating material, transforming what was previously a reliability issue into a strength-enhancing feature
2Reliability
If plating is performed on groove surfaces to prevent bonding material from spreading, then bonding reliability is improved, but manufacturing complexity and cost increase
Solution Approach 1:
Instead of applying plating uniformly across the groove surfaces, the invention uses local geometric variation in groove depth to control bonding material behavior. The deeper second depth region along the outer perimeter serves as a dedicated zone for excess bonding material, eliminating the need for plating while maintaining reliability
Solution Approach 2:
The invention extracts the plating step from the manufacturing process by replacing it with a geometrically designed groove structure. The groove shape itself provides the necessary control over bonding material flow and anchoring, removing the complex plating operation while achieving the same functional outcome
3Reliability
If precise control of bonding material amount is implemented to prevent spreading, then bonding reliability is improved, but manufacturing efficiency decreases
Solution Approach 1:
The groove structure with its deeper second depth region along the outer perimeter acts as a self-regulating feature that automatically captures excess bonding material. This eliminates the need for precise control mechanisms, allowing manufacturers to use simpler, faster bonding processes while maintaining reliability through the groove's inherent material management capability
Solution Approach 2:
The groove geometry is pre-designed with a deeper region to anticipate and accommodate potential excess bonding material. This preliminary structural preparation prevents spreading issues before they occur, eliminating the need for complex real-time control during the bonding process and thereby maintaining high manufacturing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances the reliability and manufacturing efficiency of semiconductor apparatuses by preventing excess bonding material from causing interfacial separation and cracking, ensuring a stable anchor effect and efficient heat dissipation.
Implementation Method 1
a bonding material disposed between the base plate and the metal plate to be in surface-to-surface contact with the base plate and the metal plate to bond the metal plate to the base plate
Implementation Method 2
the deeper area is disposed beside an inner-side sidewall of the recess when an inner side is defined as being situated further inside, away from the outer perimeter of the metal plate. At least a portion of the deeper area has the bonding material disposed therein
Implementation Method 3
providing an anchor effect, thus reducing stress and improving bonding reliability
Data Source
AI summary
A semiconductor apparatus includes a base plate, a metal plate disposed on the base plate, a bonding material disposed between the base plate and the metal plate to be in surface-to-surface contact with the base plate and the metal plate to bond the metal plate to the base plate, an insulating plate disposed on the metal plate, a circuit member disposed on the insulating plate to be in surface-to-surface contact with the insulating plate, a semiconductor device mounted on the circuit member, and an encapsulating material covering the metal plate, the bonding material, the insulating plate, the circuit member, and the semiconductor device to encapsulate an area over the base plate, wherein a bottom face area of the metal plate along the outer perimeter of the metal plate is not covered with the bonding material, wherein the base plate has a groove-shape recess that is disposed along the outer perimeter of the metal plate to face the bottom surface area, wherein the recess has an area having a first depth and a deeper area deeper than the first depth, and the deeper area is disposed beside an inner-side sidewall of the recess, and wherein at least a portion of the deeper area has the bonding material disposed therein.