Semiconductor Light-Emitting Structure With Groove Reflectors
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Solution Overview
Problem
The preparation process of semiconductor light-emitting devices with resonant chambers is complicated due to the need for patterning a first reflector, which increases complexity and potentially affects the performance of the device.
Innovation Solution
A method involving the formation of a mask layer with openings on a substrate, etching to create grooves for first reflectors, and epitaxial growth of a light-emitting structure, eliminating the need for patterning and reducing stress through the use of a dielectric layer on the sidewalls, thereby simplifying the process and improving performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a first reflector is patterned to form multiple semiconductor light-emitting devices, then multiple devices can be formed, but the preparation process becomes complicated
Solution Approach 1:
The substrate is divided into multiple regions by forming grooves that separate different device areas. The mask layer is segmented into multiple openings, allowing simultaneous formation of multiple first reflectors in different regions without requiring complex patterning of a single continuous reflector structure
Solution Approach 2:
The mask layer is formed with multiple openings beforehand, and grooves are pre-formed to define the positions of first reflectors before epitaxial growth. This preliminary structuring eliminates the need for complex post-growth patterning of the first reflector, simplifying the overall preparation process
2Productivity
If epitaxial growth is performed directly on the substrate, then the light-emitting structure can be formed, but stress accumulates affecting device performance
Solution Approach 1:
A dielectric layer is introduced as an intermediary between the substrate and the light-emitting structure. This dielectric layer is formed on the sidewalls of the grooves and acts as a stress buffer, reducing stress accumulation during epitaxial growth and improving device reliability
Solution Approach 2:
The dielectric layer is selectively formed only on the sidewalls of the grooves, providing localized stress relief where it is most needed during epitaxial growth, while maintaining the structural integrity of the device regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The simplified preparation process reduces complexity and enhances the performance of semiconductor light-emitting devices by eliminating the need for patterning and reducing stress on the epitaxial structure, leading to improved reflectivity and overall device efficiency.
Implementation Method 1
etching the substrate at each of the plurality of openings to form a first groove
Implementation Method 2
epitaxially growing a light-emitting structure on the first reflector, the light-emitting structure including a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxially grown in sequence
Implementation Method 3
forming a first reflector in the first groove
Data Source
AI summary
Disclosed are a semiconductor light-emitting device and a preparation method of the semiconductor light-emitting device. The preparation method of the semiconductor light-emitting device includes: forming a mask layer on a substrate, the mask layer is provided with a plurality of openings exposing the substrate; etching the substrate at each of the plurality of openings to form a first groove, and forming a first reflector in the first groove; epitaxially growing a light-emitting structure on the first reflector, and the light-emitting structure includes a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxial grown in sequence; forming a second reflector in one side of the light-emitting structure away from the first reflector.