Semiconductor Device Groove Solder Bonding for Crack Resistance
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Solution Overview
Problem
Conventional semiconductor devices experience cracks in the main electrode due to temperature cycles, which compromises their structural reliability.
Innovation Solution
A semiconductor device design featuring a semiconductor chip with an insulating film covering its edges and a plating layer, a metal wiring plate with grooves, and solder filling these grooves to bond the plating layer and wiring plate, ensuring the solder thickness is greater at the boundary between the insulating film and plating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor devices are subjected to temperature cycle tests, then thermal expansion and contraction occur, but cracks develop in the main electrode due to stress concentration
Solution Approach 1:
The patent applies local quality by creating a groove structure at the specific location where the solder layer contacts the main electrode. This groove is positioned to avoid stress concentration at the boundary between the insulating film and plating layer, while the solder thickness is locally increased in this groove region to provide enhanced stress distribution. This localized structural modification addresses the specific problem of crack formation without requiring changes to the entire device structure.
Solution Approach 2:
The patent implements beforehand cushioning by pre-forming a groove structure in the solder layer before temperature cycling occurs. This groove structure, with its increased solder thickness at critical boundaries, acts as a stress-absorbing feature that cushions against thermal expansion and contraction forces during subsequent temperature cycle tests, preventing crack formation in the main electrode.
2Reliability
If solder is used to bond the metal wiring plate to the semiconductor chip, then electrical connection is achieved, but stress concentration occurs at the boundary between insulating film and plating layer
Solution Approach 1:
The patent applies local quality by creating a groove structure at the specific location where the solder layer contacts the main electrode. This groove is positioned to avoid stress concentration at the boundary between the insulating film and plating layer, while the solder thickness is locally increased in this groove region to provide enhanced stress distribution. This localized structural modification addresses the specific problem of crack formation without requiring changes to the entire device structure.
Solution Approach 2:
The groove structure acts as an intermediary feature between the solder layer and the main electrode. By creating this intermediate structure with increased solder thickness, the patent provides a transition zone that mediates the stress transfer between the solder and the electrode, reducing stress concentration at the critical boundary region.
3Reliability
If the solder layer is made thicker to reduce stress, then stress distribution improves, but the device structure becomes more complex
Solution Approach 1:
The patent applies local quality by creating a groove structure at the specific location where the solder layer contacts the main electrode. This groove is positioned to avoid stress concentration at the boundary between the insulating film and plating layer, while the solder thickness is locally increased in this groove region to provide enhanced stress distribution. This localized structural modification addresses the specific problem of crack formation without requiring changes to the entire device structure.
Solution Approach 2:
The patent implements partial action by increasing the solder thickness only in the specific groove region where stress concentration occurs, rather than uniformly increasing the solder layer throughout the entire bonding interface. This partial modification provides the necessary stress distribution improvement while minimizing the added complexity and material usage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces plastic strain amplitude and enhances the structural reliability of the semiconductor device by distributing stress effectively, preventing cracks and extending its lifespan.
Implementation Method 1
a solder part filling the groove so as to bond the plating layer and the bottom surface of the junction part together
Data Source
AI summary
A semiconductor device includes a semiconductor chip including a semiconductor substrate with a top surface electrode deposited on a top surface of the semiconductor substrate. An insulating film selectively covers edges of a top surface of the top surface electrode, and a plating layer covers the top surface of the top surface electrode exposed to an opening of the insulating film. A metal wiring plate includes a junction part located over the insulating film and the plating layer, and provided with a groove recessed upward from a bottom surface of the junction part. A solder part fills the groove so as to bond the plating layer and the bottom surface of the junction part together. A boundary between the insulating film and the plating layer is encompassed within the groove.