Semiconductor Interconnect Groove Welding for Thinner Stack Bonding
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Solution Overview
Problem
Current multi-layer stack packaging technologies face challenges with increased overall thickness due to connection structures, instability of connection points, and risk of short-circuiting caused by the use of Non-Conduction Adhesive Film (NCF) materials, which also fail to meet the requirements of thinning terminals.
Innovation Solution
A semiconductor structure design featuring electrical connection columns and conductive columns arranged in grooves, with a welding structure filled within these grooves to enhance connection tightness and reduce material consumption, thereby minimizing the risk of short-circuiting and overall thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If Non-Conduction Adhesive Film (NCF) materials are used for connection structures, then the multi-layer stack structure can be assembled, but the overall thickness increases and does not meet the requirements of thinning terminals
Solution Approach 1:
The patent extracts and removes the NCF material from the connection structure, replacing it with a welding structure that directly bonds the bases without requiring additional adhesive film thickness, thereby reducing the overall stack thickness while maintaining assembly capability
Solution Approach 2:
The patent transitions from a planar adhesive bonding approach to a three-dimensional welding structure that fills grooves and connects bases through vertical interconnection columns, changing the dimensional approach to achieve both assembly and thickness reduction
2Volume of moving object
If the size of connection structures is reduced to meet integration requirements, then the multi-layer stack structure becomes more compact, but the distance between adjacent connection structures decreases causing short-circuiting and wafer-to-wafer separation
Solution Approach 1:
The patent segments the connection structure into distinct components: interconnection columns for electrical connection, grooves for isolation, and welding structures for mechanical bonding. This segmentation allows each component to perform its specific function independently, enabling compact sizing while maintaining electrical isolation and mechanical stability
Solution Approach 2:
The welding structure acts as an intermediary element that fills the groove and provides both mechanical support and electrical isolation between adjacent connection structures. This intermediary prevents direct contact between neighboring interconnection columns, eliminating short-circuiting risks even when structures are closely spaced
3Volume of moving object
If connection structures are made smaller for higher integration, then the multi-layer stack structure becomes more compact, but the connection stability decreases leading to wafer-to-wafer separation
Solution Approach 1:
The welding structure is nested within the groove and surrounds the interconnection column, creating a nested configuration where the welding material provides structural support and bonding strength. This nested design allows compact connection structures while maintaining stability through the surrounding welding structure that prevents wafer separation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves the reliability and stability of semiconductor structures by reducing the likelihood of short-circuiting and overall thickness, while also minimizing material usage and enhancing signal transmission efficiency.
Implementation Method 1
At least a portion of the welding structure is filled in the second groove, and at least a further portion of the welding structure is filled between the conductive column and the first groove
Data Source
AI summary
A semiconductor structure and a method for same are provided. The semiconductor structure includes: a first base having a first face, a second base having a second face, and a welding structure. The first base has an electrical connection column protruding from the first face. A first groove is provided at top of the electrical connection column. A conductive column is provided in the second base, and the second base also has a second groove. A top face and at least portion of a side face of the conductive column are exposed by the second groove. The electrical connection column is partially located in the second groove, and the conductive column is partially located in the first groove. At least portion of the welding structure is filled in the second groove, and at least further portion of the welding structure is filled between the conductive column and first groove.