Power Semiconductor Guard Rings for Current Collapse Suppression
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Solution Overview
Problem
Conventional power semiconductor devices experience current collapse effects due to carrier trapping between the gate and drain electrodes, leading to variations in conduction current and increased channel resistance, which affects device reliability and performance.
Innovation Solution
The formation of multiple guard rings between the gate and drain electrodes injects holes into the channel layer to capture trapped electrons, reducing the electric field concentration at the drain electrode edge, thereby preventing current collapse and improving device reliability and breakdown voltage characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple guard rings are formed between gate and drain electrodes, then current collapse effect is prevented and device reliability is improved, but device structure and manufacturing process become more complex
Solution Approach 1:
The guard ring structure is segmented into multiple discrete rings positioned at different locations between the gate and drain electrodes. This segmentation allows each guard ring to independently address carrier trapping in different regions, effectively preventing current collapse while maintaining a manageable structural complexity through modular design
Solution Approach 2:
The guard rings act as intermediary structures that introduce holes into the channel layer to capture trapped electrons. These intermediary elements mediate between the gate and drain electrodes, preventing direct harmful interactions and reducing the concentration of electric field at the drain electrode edge without requiring fundamental redesign of the main device structure
2Reliability
If multiple guard rings are formed between gate and drain electrodes, then breakdown voltage characteristics are improved, but manufacturing process becomes more complex
Solution Approach 1:
The formation of multiple guard rings is merged with the existing semiconductor fabrication process flow. The guard rings are formed using standard doping and deposition techniques that are already part of the manufacturing process, allowing multiple functional structures to be created in integrated steps rather than requiring separate specialized processes
Solution Approach 2:
The guard rings are designed with optimized parameters including specific doping concentrations, ring dimensions, and spacing distances. By carefully controlling these parameters, the structure achieves improved breakdown voltage characteristics while remaining compatible with standard manufacturing capabilities and process tolerances
3Reliability
If guard rings inject holes to capture trapped electrons, then channel resistance is reduced and memory effect is minimized, but electric field concentration at drain edge increases
Solution Approach 1:
The guard rings are positioned at specific locations between the gate and drain electrodes rather than uniformly distributed. This local placement strategy concentrates the hole injection effect in regions where carrier trapping is most problematic, reducing channel resistance and memory effect in those critical areas while the overall distribution prevents excessive electric field concentration at the drain edge
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes the memory effect, reduces electrical resistance, and enhances breakdown voltage characteristics by controlling impact ionization, ensuring improved reliability and performance of the power semiconductor device.
Implementation Method 1
forming multiple guard rings in a separation space between a gate electrode and a drain electrode. This formation enables the injection of holes in a channel layer, which captures trapped electrons
Implementation Method 2
prevents the occurrence of current collapse effects. As a result, the power semiconductor device ensures device reliability by reducing the concentration of the electric field at the edge side of the drain electrode
Data Source
AI summary
A power semiconductor device and its manufacturing method are proposed. Specifically, the device features a plurality of guard rings formed on the separation space between the gate electrode and drain electrode. These guard rings inject holes into the channel layer, which capture trapped electrons and prevent the occurrence of a current collapse effect. By reducing the concentration of the electric field at the edge of the drain electrode, this power semiconductor device ensures the reliability of the device.