Semiconductor Heat Dissipation Columns for High-Density Chips
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge of insufficient heat dissipation in semiconductor devices, particularly in high-density transistor structures, leads to elevated junction and chip temperatures, hindering further integration and performance improvements due to limited thermal conductivity of materials like silicon dioxide and silicon.
Innovation Solution
Integration of high thermal conductivity structures, such as vertical and horizontal heat dissipation columns and plates within the semiconductor substrate, to create direct and efficient thermal pathways from transistor junctions to the die edge, utilizing materials like BN and AlN for enhanced heat removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor density is increased to achieve higher integration, then productivity and device capability are improved, but heat dissipation capability deteriorates due to limited thermal conductivity of silicon dioxide and silicon
Solution Approach 1:
The patent introduces thermal dissipation structures (vertical heat dissipation columns and horizontal heat dissipation plates) as intermediary elements between the transistor junctions and the external environment. These structures serve as thermal mediators that conduct heat away from the high-density transistor regions, enabling higher integration densities without excessive temperature rise.
Solution Approach 2:
The patent employs composite material structures combining different thermal conductivity materials. The vertical heat dissipation columns use materials with high thermal conductivity (such as diamond, cubic boron nitride, or silicon carbide) to create efficient thermal pathways, while the horizontal heat dissipation plates provide additional thermal management. This composite approach enables effective heat removal from high-density transistor regions.
2Temperature
If external heat removal methods (such as liquid cooling or heat sinks) are used, then heat dissipation is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges the heat dissipation function with the existing semiconductor device structure by integrating vertical heat dissipation columns and horizontal heat dissipation plates directly into the transistor architecture. This consolidation eliminates the need for separate external cooling systems, reducing overall device complexity while maintaining effective thermal management.
Solution Approach 2:
The semiconductor device structure provides its own heat dissipation capability through integrated thermal management structures. The vertical heat dissipation columns and horizontal heat dissipation plates are self-contained within the device, enabling the device to manage its own thermal load without requiring complex external cooling infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively reduces transistor junction temperatures, enabling better thermal management and facilitating the transition to Tera Scale Integration by maintaining lower operating temperatures and improving performance and power efficiency.
Implementation Method 1
a vertical heat dissipation column in the semiconductor substrate and surrounding the semiconductor body region. Wherein the vertical heat dissipation column comprises a thermal dissipation material with a thermal conductivity higher than that of the semiconductor substrate
Data Source
AI summary
The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and/or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located within a semiconductor body region of the semiconductor substrate; and a vertical heat dissipation column in the semiconductor substrate and surrounding the semiconductor body region. Wherein the vertical heat dissipation column comprises a thermal dissipation material with a thermal conductivity higher than that of the semiconductor substrate or that of silicon oxide.