Semiconductor Device Heat Dissipation via Surrounding Electrode

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Solution Overview

Problem

Conventional double gate IGBTs suffer from non-uniform temperature distribution due to inefficient heat dissipation, particularly around the control gate electrode pad, which increases the risk of thermal breakdown, especially during large loss events or short circuit accidents.

Innovation Solution

The semiconductor device design includes a second control electrode pad surrounded by the second main electrode, facilitating heat dissipation from the peripheral region of the control electrode pad, thereby reducing temperature non-uniformity and improving operational performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a gate insulating film of low thermal conductivity is interposed between the control gate electrode pad and the collector electrode, then electrical insulation is improved, but heat dissipation from the control gate electrode pad is hindered

Engineering Contradiction:

Improveelectrical insulationVSAvoidheat dissipation

Core Design Contradiction:

ReliabilityVSTemperature

Solution Approach 1:

A heat dissipation electrode is introduced as an intermediary component between the control gate electrode pad and the collector electrode. This mediator provides a thermal conduction path while maintaining electrical insulation through the gate insulating film, thus resolving the contradiction between electrical insulation and heat dissipation.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The heat dissipation function is segmented from the collector electrode and assigned to a dedicated heat dissipation electrode. This segmentation allows the collector electrode to focus on electrical conduction while the heat dissipation electrode specializes in thermal management, improving overall system performance.

Inventive Principle:

Principle #1Segmentation

2Ease of operation

If the control gate electrode pad is positioned at the outer peripheral portion of the collector-side main surface, then ease of connection to lead frame is improved, but heat dissipation efficiency is reduced

Engineering Contradiction:

Improveconnection to lead frameVSAvoidheat dissipation efficiency

Core Design Contradiction:

Ease of operationVSTemperature

Solution Approach 1:

The heat dissipation path is extended into the third dimension by introducing a dedicated heat dissipation electrode structure that reaches from the collector-side main surface to the emitter-side main surface. This dimensional extension provides an efficient thermal conduction path regardless of the pad's peripheral positioning.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

3Adaptability or versatility

If conventional double gate IGBT structures are used with both main electrode regions and peripheral regions having different heat dissipation efficiencies, then device functionality is maintained, but temperature uniformity deteriorates

Engineering Contradiction:

Improvedevice functionalityVSAvoidtemperature uniformity

Core Design Contradiction:

Adaptability or versatilityVSStability of the object's composition

Solution Approach 1:

The heat dissipation electrode is strategically positioned to provide enhanced heat dissipation specifically in the peripheral region where the control gate electrode pad is located. This local quality improvement addresses the temperature non-uniformity issue without affecting the overall device functionality.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances the semiconductor device's operation performance by ensuring efficient heat dissipation and reducing the risk of thermal breakdown, maintaining device reliability even under high temperature conditions.

Implementation Method 1

A gate insulating film of low thermal conductivity is interposed between a control gate electrode pad and a p+-type collector layer

Methodology Applied

Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 2

the second control electrode pad is surrounded by the second main electrode which is a heat dissipation path. This facilitates heat dissipation from the peripheral region of the second control electrode pad

Methodology Applied

Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS11183588B2Semiconductor device and inverter

Publication Date: 2021.11.23 MITSUBISHI ELECTRIC CORP

AI summary

A semiconductor device includes: a semiconductor base having a first main surface and a second main surface which are opposite to each other; a first main electrode formed on the first main surface and electrically connected to the semiconductor base; a first control electrode pad formed on the first main surface; a first insulating film interposed between the semiconductor base and the first control electrode pad; a peripheral withstand voltage holding structure formed in a peripheral region surrounding the first main electrode and the first control electrode pad on the first main surface; a second main electrode formed on the second main surface and electrically connected to the semiconductor base; a second control electrode pad formed on the second main surface; and a second insulating film interposed between the semiconductor base and the second control electrode pad, wherein the second control electrode pad is surrounded by the second main electrode.