Semiconductor Device Heat Dissipation via Segmented Electrodes
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Solution Overview
Problem
Existing semiconductor devices with staggered structure TFTs face challenges in suppressing heat-induced deterioration of characteristics while maintaining a predetermined channel width, as heat dissipation is insufficient due to small contact holes and increased size requirements.
Innovation Solution
A semiconductor device design featuring a semiconductor layer with separate regions and a high thermal conductivity upper electrode positioned between these regions, allowing for efficient heat dissipation without increasing the channel width, by directly contacting the semiconductor layer and providing a shorter heat dissipation path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the semiconductor layer is divided into multiple separate regions to suppress heat-induced deterioration, then heat dissipation is improved, but the channel width decreases and transistor size increases
Solution Approach 1:
The semiconductor layer is divided into multiple separate semiconductor regions (first semiconductor region and second semiconductor region) to create heat dissipation paths. This segmentation allows heat to be conducted away from the channel region through the semiconductor regions to the electrodes, preventing heat accumulation that would deteriorate TFT characteristics.
Solution Approach 2:
The patent introduces a conductive layer between the semiconductor regions and the electrodes to facilitate heat conduction. This intermediary layer with high thermal conductivity serves as a heat transfer path, efficiently conducting heat from the semiconductor regions to the electrodes without requiring large spacing between semiconductor regions, thus maintaining channel width.
2Temperature
If the interval between semiconductor regions is increased to suppress heat-induced deterioration, then heat dissipation is improved, but the transistor size increases
Solution Approach 1:
The conductive layer acts as an efficient heat transfer intermediary with high thermal conductivity, enabling effective heat dissipation through the semiconductor regions to the electrodes without requiring large intervals between semiconductor regions. This allows compact transistor design while maintaining heat dissipation performance.
Solution Approach 2:
The patent changes the thermal conductivity parameter by introducing a conductive layer with high thermal conductivity between the semiconductor regions and electrodes. This parameter change enables efficient heat dissipation through the existing structure without increasing transistor size.
3Power
If the channel width is increased to maintain high ON current, then current capability is improved, but heat generation increases causing characteristic deterioration
Solution Approach 1:
The semiconductor layer is segmented into multiple regions that serve dual purposes: maintaining a large total channel width for high ON current capability while creating heat dissipation paths through the semiconductor regions to electrodes. This segmentation allows simultaneous achievement of high current capability and effective heat dissipation.
Solution Approach 2:
The conductive layer with high thermal conductivity serves as a heat dissipation intermediary, efficiently conducting heat away from the channel region where high current flows. This enables the channel width to be maintained large for high ON current while preventing heat accumulation that would cause characteristic deterioration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses heat-induced deterioration of TFT characteristics, enabling efficient heat dissipation and maintaining a large ON current without increasing the transistor size, making it suitable for active matrix substrates in display devices.
Implementation Method 1
a high thermal conductivity upper electrode positioned between these regions, allowing for efficient heat dissipation without increasing the channel width, by directly contacting the semiconductor layer and providing a shorter heat dissipation path
Data Source
AI summary
A semiconductor device of the present invention includes: a lower electrode (110); a contact layer (130) including a first contact layer (132), a second contact layer (134) and a third contact layer (136) overlapping with a semiconductor layer (120); and an upper electrode (140) including a first upper electrode (142), a second upper electrode (144) and a third upper electrode (146). The second contact layer (134) includes a first region (134a), and a second region (134b) separate from the first region (134a), and the second upper electrode (144) is directly in contact with the semiconductor layer (120) in a region between the first region (134a) and the second region (134b) of the second contact layer (134).