Semiconductor Heat Dissipation Structure for Bonded Memory Stacks
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Solution Overview
Problem
High-power processors generate significant heat, which can cause blistering, delamination, or cracking failures due to inadequate heat dissipation through the oxide layer bonded to the processor by memory components.
Innovation Solution
Incorporating a heat dissipation component with thermal conductivity greater than silicon, such as diamond, aluminum nitride, or silicon carbide, into the semiconductor device to efficiently dissipate heat away from the processor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If memory components are bonded to the backside of high-power processors using oxide-to-oxide direct bonding, then electrical connections and device integration are achieved, but heat dissipation capability deteriorates causing blistering/delamination/cracking failures
Solution Approach 1:
A heat dissipation component is introduced as an intermediary element between the processor and memory components. This heat dissipation component has higher thermal conductivity than the oxide bonding layer, serving as a thermal bridge to conduct heat away from the processor while allowing the oxide-to-oxide bonding to maintain electrical connections. The heat dissipation component mediates between the thermal management requirements and the electrical connection requirements.
Solution Approach 2:
The thermal conductivity parameter of the bonding structure is changed by introducing materials with higher thermal conductivity than the oxide layer. The heat dissipation component is made of materials such as diamond, cubic boron nitride, silicon carbide, or metal alloys, which have significantly higher thermal conductivity than the oxide bonding layer, thereby improving heat dissipation while maintaining structural integrity.
2Power
If high-power processors operate at 100 W or higher, then processing power and performance are improved, but heat generation increases causing thermal failures
Solution Approach 1:
The heat generated by high-power processing is converted from a harmful factor into a manageable thermal flow. The heat dissipation component is designed to efficiently conduct this generated heat away from the processor, transforming the problematic heat accumulation into a controlled thermal management system that supports sustained high-power operation.
Solution Approach 2:
The thermal conductivity parameter of the heat dissipation component is significantly increased compared to conventional materials. By using materials with thermal conductivity much higher than silicon, the system can handle the increased heat generation from 100 W or higher power operation without thermal failures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of high-thermal-conductivity materials effectively mitigates heat-related failures in high-power processors by enhancing heat dissipation, thereby improving the reliability and performance of semiconductor devices.
Implementation Method 1
The heat dissipation component has a thermal conductivity greater than that of silicon
Implementation Method 2
a heat spreader including a vapor chamber and covering the memory component and the heat dissipation component
Implementation Method 3
a cooling component disposed on the upper surface of the heat spreader and having a fluid channel
Data Source
AI summary
A semiconductor device includes a substrate, a memory component and a heat dissipation component. The memory component is disposed on the substrate. The heat dissipation component is disposed on the substrate. The heat dissipation component has a thermal conductivity greater than that of silicon.