Heat Pipe Thermal Management for Semiconductor Substrates

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Solution Overview

Problem

High power consumption and heat generation in densely packed integrated circuits due to reduced transistor sizes lead to thermal management challenges, requiring complex and costly external cooling systems that may not reliably manage internal temperature distribution, potentially causing overheating and damage.

Innovation Solution

Incorporating heat dissipation elements with higher thermal conductivity than standard semiconductor materials, positioned near critical transistor elements or in a global manner to enhance internal thermal conductivity, allowing efficient heat transfer to external cooling systems and reducing the need for complex external cooling systems.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If transistor size is reduced to increase packing density, then functionality and speed are improved, but power consumption and heat generation increase

Engineering Contradiction:

Improvefunctionality and speedVSAvoidpower consumption and heat generation

Core Design Contradiction:

ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent applies local quality by implementing heat dissipation elements specifically in temperature critical device areas rather than uniformly across the entire substrate. High thermal conductivity materials are selectively positioned near heat-generating circuit elements to provide localized thermal management where it is most needed, allowing dense transistor packing in critical areas while managing the resulting heat generation.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The substrate is segmented into different thermal management zones with heat dissipation elements strategically placed in temperature critical areas. This segmentation allows different regions to have different thermal properties - high thermal conductivity in hot spots and standard materials in less critical areas - enabling optimized thermal management for high-density transistor configurations.

Inventive Principle:

Principle #1Segmentation

2Temperature

If external cooling systems are made more complex to manage internal temperature distribution, then heat dissipation capability is improved, but device reliability deteriorates due to insufficient spatial temperature resolution

Engineering Contradiction:

Improveheat dissipation capabilityVSAvoiddevice reliability

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

The patent implements preliminary action by incorporating heat dissipation elements directly into the substrate during manufacturing, before the device operates. This proactive approach establishes efficient thermal pathways from the beginning, preventing heat accumulation that could lead to overheating and reliability issues, rather than relying on complex external cooling systems that react to thermal conditions.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

Heat dissipation elements act as thermal intermediaries between the heat-generating transistor elements and the substrate. These elements with high thermal conductivity serve as a bridge that efficiently transfers heat from critical device areas to the substrate, improving spatial temperature resolution and enabling more reliable thermal management without complex external cooling systems.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Duration of action of stationary object

If heat dissipation elements are added to manage thermal stress, then operational lifetime is improved, but device complexity increases

Engineering Contradiction:

Improveoperational lifetimeVSAvoiddevice complexity

Core Design Contradiction:

Duration of action of stationary objectVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by modifying the thermal conductivity parameter in specific regions of the substrate through the addition of heat dissipation elements. This localized parameter change allows efficient heat transfer in critical areas while maintaining simple device architecture overall, extending operational lifetime by managing thermal stress without significantly increasing device complexity.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces the requirements on external cooling systems, increases power ratings, enables higher clock frequencies, and enhances packing density while improving reliability and performance by effectively managing thermal stress and extending the operational lifetime of semiconductor devices.

Implementation Method 1

heat dissipation elements with higher thermal conductivity than standard semiconductor materials, positioned near critical transistor elements or in a global manner to enhance internal thermal conductivity, allowing efficient heat transfer to external cooling systems

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS8564120B2Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside

Publication Date: 2013.10.22 GLOBALFOUNDRIES US INC

AI summary

By providing heat dissipation elements or heat pipes in temperature critical areas of a semiconductor device, enhanced performance, reliability and packing density may be achieved. The heat dissipation elements may be formed on the basis of standard manufacturing techniques and may be positioned in close proximity to individual transistor elements and/or may be used for shielding particular circuit portions.