Semiconductor Package Heat Dissipation Plates for Parallel Current Balance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
When multiple semiconductor devices are connected in parallel, differences in parasitic resistance and inductance among substrate patterns cause current imbalance, and low thermal bonding between devices and heat sinks leads to temperature deviations that are difficult to eliminate.
Innovation Solution
The semiconductor device design includes first and second heat dissipation plates that protrude from opposite sides of a sealing resin, with specific height positions allowing them to adhere to each other without lifting the devices from their attachment positions, thereby suppressing current and thermal imbalance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If heat dissipation plates are stacked vertically for connection, then semiconductor devices can be connected in parallel, but the devices cannot be correctly fixed as they are lifted from attachment positions
Solution Approach 1:
The patent transitions from vertical stacking to lateral extension of heat dissipation plates. The first and second heat dissipation plates extend horizontally from opposite sides of the semiconductor device body, enabling parallel connection through lateral adhesion rather than vertical stacking. This dimensional change allows devices to remain fixed at attachment positions while achieving parallel connectivity.
2Ease of manufacture
If substrate patterns are used to connect drain terminals, then semiconductor devices can be connected, but differences in parasitic resistance and parasitic inductance cause current imbalance
Solution Approach 1:
The patent introduces heat dissipation plates as intermediary connection elements between drain terminals of parallel-connected devices. These plates provide a dedicated low-inductance, low-resistance connection path that is separate from the substrate patterns, thereby eliminating the parasitic parameter variations that cause current imbalance while maintaining manufacturing simplicity.
3Temperature
If devices are connected through insulating sheets to heat sinks, then thermal connection is established, but thermal bonding is low and temperature deviations cannot be eliminated
Solution Approach 1:
The patent merges the electrical connection function (drain terminal connection) with the thermal connection function (heat dissipation) by using the heat dissipation plates for both purposes. The plates are electrically connected to drain terminals and thermally connected to heat sinks, eliminating the insulating sheet interface and achieving superior thermal bonding and temperature uniformity across parallel-connected devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively connects semiconductor devices in parallel without lifting them, thereby suppressing current and thermal imbalance, and facilitating easier manufacturing and connection through the use of screws or other fastening methods.
Implementation Method 1
The first heat dissipation plate is electrically connected to the drain, and protrudes from a second side intersecting with the first side of the sealing resin in top view. The second heat dissipation plate is electrically connected to the drain, and protrudes from a third side opposing the second side of the sealing resin in top view.
Data Source
AI summary
A semiconductor device includes: a semiconductor element; a sealing resin; a gate terminal; a drain terminal; a source terminal; a heat dissipation plate electrically connected to the drain, and protruding from a second side intersecting with a first side of the sealing resin in top view; and a heat dissipation plate electrically connected to the drain, and protruding from a third side opposing the second side of the sealing resin in top view. At least a height position of a lower surface of a distal end portion of the heat dissipation plate and a height position of an upper surface of a proximal end portion of the heat dissipation plate or a height position of a lower surface of a distal end portion of the heat dissipation plate and a height position of an upper surface of a proximal end portion of the heat dissipation plate are the same.