Semiconductor Package Heat Radiation Plates for Inductance and Thermal Management
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Solution Overview
Problem
In semiconductor devices, particularly those using wide bandgap semiconductors, parasitic inductance leads to surge voltage generation, and existing surface-mounted package designs struggle to effectively suppress this issue while also improving heat radiation properties.
Innovation Solution
The semiconductor device incorporates a heatsink-compatible design with a first and second heat radiation plate, electrically connected to the semiconductor element and fixed to a heatsink, reducing parasitic inductance and enhancing heat radiation by allowing the plates to be connected between devices, thus improving thermal management and voltage suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through hole-type package semiconductor device is used with multiple bonding wires and lead terminals, then the device can be connected to form bridge circuits, but parasitic inductance increases and surge voltage is easily generated
Solution Approach 1:
The patent transitions from a through-hole package to a surface-mounted package configuration, fundamentally changing the spatial dimension of connection. The heat radiation plates extend in the horizontal plane rather than vertically through the substrate, reducing the loop area and thus parasitic inductance while maintaining electrical connectivity for bridge circuits
Solution Approach 2:
The device is divided into functionally independent heat radiation plates that can be selectively connected. Each plate serves both as a thermal management component and an electrical connection point, allowing flexible configuration for bridge circuits while minimizing parasitic inductance through optimized plate geometry and arrangement
2Speed
If wide bandgap semiconductor material is used for the semiconductor element, then the switching speed increases, but surge voltage becomes harder to suppress due to higher switching speed
Solution Approach 1:
By adopting a surface-mounted configuration with extended heat radiation plates, the patent reduces the current loop area in the horizontal plane. This dimensional optimization lowers parasitic inductance, enabling the high switching speeds of wide bandgap materials to be utilized without excessive surge voltage generation
3Device complexity
If only input and output leads are provided as metal plates in a surface-mounted package, then parasitic inductance decreases, but heat radiation property cannot be improved due to lack of heatsink connection
Solution Approach 1:
The heat radiation plates are designed to serve dual functions: as electrical connection points for reducing parasitic inductance and as thermal conduction paths for heat radiation. By making these plates heatsink-compatible, the patent simultaneously achieves low inductance and effective thermal management
Solution Approach 2:
The patent merges the electrical connection function and thermal management function into a single integrated structure. The heat radiation plates combine the roles of lead terminals and heatsink interfaces, eliminating the need for separate components and achieving both low parasitic inductance and improved heat radiation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces parasitic inductance, suppresses surge voltage occurrence, and enhances the heat radiation properties of semiconductor devices, particularly when used in bridge circuits, by allowing for efficient thermal dissipation and maintaining circuit symmetry.
Implementation Method 1
The first heat radiation plate and the second heat radiation plate are fixed to the heatsink, thus a heat radiation property of the semiconductor device can be improved
Data Source
AI summary
A semiconductor device includes: a semiconductor element; sealing resin formed into a rectangular shape in a top view to seal the semiconductor element; a first heat radiation plate electrically connected to a first electrode, and protruding from a first side of the sealing resin in a top view; a second heat radiation plate electrically connected to a second electrode, and protruding from a second side facing the first side of the sealing resin in a top view; a first terminal electrically connected to the first electrode, and protruding from a third side intersecting with the first side of the sealing resin in a top view; and a second terminal electrically connected to the second electrode, and protruding from the third side of the sealing resin in a top view, wherein the first heat radiation plate and the second heat radiation plate can be fixed to the heatsink.