Semiconductor Heat-Removal Structures for High-Density Chip Cooling
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Solution Overview
Problem
The increasing number of transistors on a die in semiconductor devices leads to elevated junction and chip temperatures due to inadequate heat dissipation, which slows down transistor performance and necessitates higher power consumption, exacerbating the heat dissipation problem.
Innovation Solution
The integration of High Heat-Removal (HHR) structures within the semiconductor substrate, including horizontal and vertical heat dissipation plates made of high thermal conductivity materials like BN, AlN, or metals, to enhance thermal dissipation directly associated with individual transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of transistors on a die is increased to improve chip performance, then transistor integration density is improved, but junction temperature and chip temperature increase due to inadequate heat dissipation
Solution Approach 1:
The patent introduces vertical heat dissipation structures (heat dissipation columns extending from top to bottom surfaces) and horizontal heat dissipation plates within the substrate, transforming heat dissipation from a two-dimensional surface problem to a three-dimensional volumetric solution. This dimensional expansion allows heat to be conducted through multiple pathways simultaneously, effectively managing thermal load in high-density transistor configurations
Solution Approach 2:
The patent employs composite material structures combining different thermal conductivity materials - high thermal conductivity materials (such as diamond, cubic boron nitride, or metal alloys with thermal conductivity >200 W/m·K) are integrated with semiconductor substrates to create hybrid heat dissipation structures. These composite regions provide superior thermal conduction pathways while maintaining electrical isolation, enabling effective heat removal from densely packed transistors
2Speed
If higher power is supplied to circuitry to accelerate transistor performance, then transistor speed is improved, but die temperature rises further exacerbating heat dissipation problems
Solution Approach 1:
The patent implements heat dissipation structures during the monolithic fabrication process itself, rather than as an afterthought. Heat dissipation columns and plates are formed concurrently with transistor structures through integrated processing steps including selective epitaxial growth, chemical vapor deposition, and in-situ material formation. This preliminary integration ensures thermal management capability is built-in before power consumption issues arise, enabling high-speed operation without thermal runaway
Solution Approach 2:
The patent applies heat dissipation structures with spatially varying properties - high thermal conductivity materials are strategically placed in regions of highest power density (such as under active transistor regions and interconnect layers), while material composition and structure are optimized locally to match thermal load requirements. This localized optimization enables effective heat management that supports higher operating speeds without uniform temperature increase across the entire die
3Temperature
If conventional heat dissipation methods such as external heat sinks or liquid cooling are used, then heat removal capability is improved, but manufacturing cost increases significantly
Solution Approach 1:
The patent merges heat dissipation functionality directly into the semiconductor substrate structure itself, combining thermal management with the device fabrication process. Heat dissipation columns and plates are formed using the same monolithic integration techniques used for transistor fabrication, eliminating the need for separate external heat sink assemblies or liquid cooling systems. This integration reduces manufacturing steps, eliminates additional components, and lowers overall system cost while providing effective heat removal
Solution Approach 2:
The patent enables the semiconductor device to self-manage its own heat dissipation through internally integrated thermal conduction pathways. The heat dissipation structures are formed as part of the device architecture itself, using materials and processes already present in the fabrication sequence. This self-service approach eliminates dependence on external cooling infrastructure, reducing both manufacturing complexity and operational overhead while providing efficient thermal management
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces transistor junction temperatures, improves transistor performance, and extends the thermal dissipation path from the die to the outside environment, addressing the limitations of current heat dissipation methods.
Implementation Method 1
a horizontal heat dissipation plate in the semiconductor substrate and under the circuit element. the first thermal dissipation material with a first thermal conductivity higher than the thermal conductivity of the semiconductor substrate
Data Source
AI summary
The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and/or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located within a semiconductor body region of the semiconductor substrate; and a horizontal heat dissipation plate in the semiconductor substrate and under the circuit element. Wherein the horizontal heat dissipation plate comprises a first thermal dissipation material with a first thermal conductivity higher than the thermal conductivity of the semiconductor substrate or the thermal conductivity of silicon oxide.