Semiconductor Heat-Removal Columns for Lower Junction Temperature
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Solution Overview
Problem
The increasing number of transistors in semiconductor chips leads to elevated junction and chip temperatures due to inadequate heat dissipation, which slows down transistor performance and necessitates higher power consumption, exacerbating the heat dissipation problem.
Innovation Solution
The integration of High Heat-Removal (HHR) structures within the semiconductor substrate, including vertical heat dissipation columns and horizontal heat dissipation plates made of high thermal conductivity materials like BN, AlN, or metal, to enhance thermal dissipation directly associated with individual transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of transistors is increased to improve chip performance, then transistor integration density is improved, but junction temperature and chip temperature increase due to inadequate heat dissipation
Solution Approach 1:
The patent introduces vertical heat dissipation columns that extend through the substrate thickness, adding a third dimension (vertical direction) to heat dissipation paths. This enables heat to be conducted from the transistor junctions vertically through high thermal conductivity materials to the substrate surface, complementing the traditional lateral heat dissipation paths and effectively reducing junction temperature while maintaining high transistor integration density
Solution Approach 2:
The patent employs composite material structures where high thermal conductivity materials (such as diamond, cubic boron nitride, or metal interlayers) are integrated within the semiconductor substrate. These composite regions form thermal conduction pathways with superior thermal properties compared to pure semiconductor material, enabling efficient heat removal from densely integrated transistors without compromising electrical performance
2Speed
If higher power is supplied to accelerate transistor performance, then transistor speed is improved, but die temperature increases and heat dissipation problem worsens
Solution Approach 1:
The patent introduces intermediary high thermal conductivity material layers and vertical heat dissipation columns that act as thermal mediators between the transistor junctions and the substrate surface. These intermediary structures provide dedicated thermal conduction pathways that efficiently transport heat away from the transistor active regions, enabling higher power operation and faster transistor speeds without excessive die temperature increase
3Temperature
If conventional heat dissipation methods (external heat sinks, liquid cooling) are used, then some heat removal is achieved, but cost increases and efficiency remains low for reducing transistor junction temperatures
Solution Approach 1:
The patent implements heat dissipation structures during the monolithic fabrication process itself, performing preliminary thermal management integration before chip packaging. High thermal conductivity material layers are deposited and patterned along with transistor structures, and vertical heat dissipation columns are formed through the substrate during standard fabrication steps, eliminating the need for expensive post-packaging thermal solutions and directly reducing transistor junction temperatures
Solution Approach 2:
The patent merges thermal management functions with the transistor fabrication process by integrating heat dissipation structures into the monolithic device architecture. The vertical heat dissipation columns and high thermal conductivity material layers are formed using the same fabrication steps as transistor creation, combining electrical and thermal device functions in a single integrated structure that reduces both junction temperature and manufacturing cost
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces transistor junction temperatures, improves chip performance, and addresses the limitations of current heat dissipation methods, enabling more efficient thermal management and supporting the integration of larger numbers of transistors on a die.
Implementation Method 1
a vertical heat dissipation column in the semiconductor substrate and surrounding the semiconductor body region. Wherein the vertical heat dissipation column comprises a thermal dissipation material with a thermal conductivity higher than that of the semiconductor substrate
Data Source
AI summary
The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and/or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located within a semiconductor body region of the semiconductor substrate; and a vertical heat dissipation column in the semiconductor substrate and surrounding the semiconductor body region. Wherein the vertical heat dissipation column comprises a thermal dissipation material with a thermal conductivity higher than that of the semiconductor substrate or that of silicon oxide.