Semiconductor Heat Sink Assembly With Large-Area Metallic Interface
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Solution Overview
Problem
Conventional semi-conductor devices face challenges in efficiently dissipating heat, leading to potential overheating and reduced device efficiency due to limited contact area between heat sinks.
Innovation Solution
The semi-conductor device incorporates a first metallic layer secured to the cover's surface via a bi-functional adhesive, providing a larger contact area for the second heat sink, which enhances heat dissipation and reduces stress concentrations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional heat sink structure with limited contact area is used, then the device structure remains simple, but heat dissipation efficiency is reduced and overheating risk increases
Solution Approach 1:
The patent transitions from a conventional point or small-area contact between heat sinks to a planar metallic layer that contacts the cover over a large surface area. This dimensional expansion from linear/contact-point to planar geometry fundamentally increases the heat transfer interface, allowing efficient heat dissipation while maintaining structural integration.
Solution Approach 2:
The first metallic layer serves multiple functions simultaneously: it acts as a heat conduction path from the first heat sink, provides a large-area contact interface for the second heat sink, and serves as a structural bonding layer between the cover and second heat sink. This multi-functionality resolves the contradiction by achieving enhanced heat dissipation without proportionally increasing structural complexity.
2Reliability
If a small contact area between heat sinks is used, then the device assembly remains simple, but stress concentrations occur leading to delamination and device failure
Solution Approach 1:
By expanding the contact interface from a small area to a large planar metallic layer, the patent distributes mechanical stresses across a broad surface area. This dimensional expansion prevents stress concentration at discrete contact points, thereby eliminating delamination risks and enhancing device robustness without complicating the assembly process.
Solution Approach 2:
The first metallic layer is pre-applied to the cover surface before attaching the second heat sink. This preliminary action creates a compliant, large-area bonding interface that accommodates thermal expansion and mechanical stresses, preventing delamination and enhancing reliability while maintaining assembly simplicity.
3Productivity
If the contact area between heat sinks is increased, then heat dissipation improves and overheating is reduced, but the device structure becomes more complex
Solution Approach 1:
The patent merges the heat conduction function, bonding function, and structural support function into a single integrated first metallic layer. This layer simultaneously conducts heat from the first heat sink, provides a large-area contact interface for the second heat sink, and bonds the cover to the heat sink assembly. By combining multiple functions into one element, the patent achieves high heat dissipation rates without proportionally increasing structural complexity.
Solution Approach 2:
The first metallic layer is designed as a multi-functional component that performs heat conduction, mechanical bonding, and stress distribution simultaneously. This universal component resolves the contradiction by enabling enhanced productivity through improved heat dissipation while avoiding the need for separate complex structural elements.
4Area of stationary object
If a conventional aperture-bounded heat sink attachment is used, then the cover provides structural enclosure, but the contact area for heat dissipation is limited
Solution Approach 1:
The patent extracts the heat dissipation function from the aperture region and distributes it across the entire cover surface through the first metallic layer. Instead of confining heat transfer to a small area within or near the aperture, the metallic layer extends the contact area across the full cover surface, thereby maximizing heat dissipation and eliminating overheating risks while maintaining the cover's structural enclosure function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased contact area between the first and second heat sinks improves heat dissipation, reduces the likelihood of overheating, and enhances device robustness by evenly distributing stresses, thus improving efficiency and reliability.
Implementation Method 1
a first metallic layer that is secured to the first major surface of the cover by virtue of a bi-functional adhesive
Implementation Method 2
The first metallic layer of the semi-conductor device serves as a foundation to the second heat sink is secured. Since the first metallic layer is secured to the first major surface of the cover, the area available for contact between the second heat sink and the first metallic layer is greater than that of conventional devices. Increasing the contact area is desirable because the amount of heat that can be dissipated from the second heat sink, and so from the device, is increased.
Implementation Method 3
The first metallic layer can be formed via electroless plating
Data Source
AI summary
A semi-conductor device includes: a lead frame and one or more dies. The one or more dies are secured to the lead frame. The semi-conductor device further includes: a clip that is secured to at least one of the one or more dies, a first heat sink that is secured to or is formed as part of the clip, and a cover that at least partially encloses the lead frame, the one or more dies, and the clip. A major surface of the cover defines an aperture that extends to the first heat sink. The semi-conductor device further includes a first metallic layer that is secured to the first major surface of the cover by a bi-functional adhesive and a second heat sink that is coupled to the first metallic layer.