Semiconductor Heat Sink Structure for Thermal Stress Management
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Solution Overview
Problem
Conventional semiconductor devices face challenges in managing short-term thermal stress during short-circuit or over-current conditions, leading to excessive thermal energy dissipation that can damage the device.
Innovation Solution
Incorporating a heat sink structure with higher thermal conductivity and/or capacity than the semiconductor body, extending from the surface into the drift structure, to efficiently dissipate thermal energy directly from the semiconductor body without passing through sensitive regions, thereby enhancing thermal resilience.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a thick copper metallization is used to dissipate thermal energy, then thermal conductivity is improved, but device characteristics are adversely impacted
Solution Approach 1:
The invention segments the heat dissipation function by introducing separate heat sink structures that are spatially distinct from the copper metallization. The heat sink structures extend into the drift region and provide an additional thermal conduction path, while the copper metallization maintains its electrical function. This segmentation allows thermal management without compromising electrical performance.
Solution Approach 2:
The heat sink structures act as intermediary elements between the semiconductor body and the external environment. These structures provide a thermal conduction path that mediates heat transfer from the drift region without requiring modification of the existing copper metallization, thus preserving device characteristics while improving thermal management.
2Temperature
If heat is dissipated through the semiconductor body, then thermal management is achieved, but sensitive regions are exposed to thermal stress
Solution Approach 1:
The invention extracts the heat dissipation function from the semiconductor body by introducing separate heat sink structures. These structures provide an alternative thermal conduction path that bypasses the sensitive semiconductor regions, removing thermal energy directly from the drift region without exposing sensitive areas to thermal stress.
Solution Approach 2:
The invention applies local quality enhancement by placing heat sink structures specifically in the drift region where heat generation occurs. This localized thermal management approach provides high thermal conductivity exactly where needed, while leaving sensitive regions untouched and preserving their electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the risk of thermal destruction by instantaneously removing thermal energy generated during stress conditions, improving the thermal ruggedness of semiconductor devices without compromising area efficiency or device performance.
Implementation Method 1
A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure
Implementation Method 2
a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure
Data Source
AI summary
A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.