Semiconductor Package Heat Spreader TIM Coplanar Design
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Solution Overview
Problem
Conventional methods of forming semiconductor packages often result in defects such as chip cracks during the process of removing encapsulant from the upper surface of the second semiconductor chip, which affects the mechanical reliability and heat radiation characteristics.
Innovation Solution
A semiconductor package design where a thermal interface material (TIM) layer is formed on the first semiconductor chip, covering the second semiconductor chip, and a heat spreader is placed on the TIM layer, with side surfaces of the first semiconductor chip, TIM layer, and heat spreader being substantially coplanar to enhance mechanical reliability and heat radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If encapsulant is removed from the upper surface of the second semiconductor chip, then heat radiation characteristics are improved, but chip cracks occur affecting mechanical reliability
Solution Approach 1:
The patent applies preliminary action by forming the TIM layer on the first semiconductor chip before mounting the second semiconductor chip. This TIM layer protrudes from the side surface of the first semiconductor chip, creating a pre-prepared thermal management structure that eliminates the need for subsequent encapsulant removal, thereby preventing chip cracks while maintaining heat radiation characteristics
Solution Approach 2:
The patent extracts the encapsulant material from the package structure, eliminating it entirely. Instead of having encapsulant covering the TIM layer and requiring removal, the design uses the TIM layer protruding from the side surface, which provides thermal conduction pathways without requiring encapsulant removal, thus avoiding mechanical damage to the second semiconductor chip
2Temperature
If TIM layer covers the second semiconductor chip, then heat dissipation efficiency is improved, but package structure complexity increases
Solution Approach 1:
The patent merges the TIM layer with the side surface structure of the first semiconductor chip. The TIM layer is formed to protrude from the side surface, combining the thermal interface function with the structural boundary definition, thereby simplifying the overall package structure while maintaining effective heat dissipation coverage over the second semiconductor chip
Solution Approach 2:
The patent applies local quality by positioning the TIM layer specifically where thermal conduction is most needed - protruding from the side surface of the first semiconductor chip to directly contact and cover the second semiconductor chip. This localized placement optimizes heat dissipation efficiency without requiring complex package-wide structural modifications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves mechanical reliability and heat radiation characteristics by preventing defects like chip cracks and ensuring efficient heat dissipation, thereby enhancing the performance of semiconductor packages.
Implementation Method 1
a thermal interface material (TIM) layer on the first semiconductor chip and in contact with side surfaces of the second semiconductor chip
Implementation Method 2
a heat spreader on the second semiconductor chip and the TIM layer... ensuring efficient heat dissipation, thereby enhancing the performance of semiconductor packages
Data Source
AI summary
Semiconductor packages including a heat spreader and methods of forming the same are provided. The semiconductor packages may include a first semiconductor chip, a second semiconductor chip, and a heat spreader stacked sequentially. The semiconductor packages may also include a thermal interface material (TIM) layer surrounding the second semiconductor chip and directly contacting a sidewall of the second semiconductor chip. An upper surface of the TIM layer may directly contact a lower surface of the heat spreader, and a sidewall of the TIM layer may be substantially coplanar with a sidewall of the heat spreader. In some embodiments, a sidewall of the first semiconductor chip may be substantially coplanar with the sidewall of the TIM layer.