Semiconductor Heat Transfer Structure for Stacked Die Thermal Management
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Solution Overview
Problem
Vertically stacked semiconductor dies face challenges in heat dissipation, leading to increased operating temperatures due to inefficient thermal management in compact packages.
Innovation Solution
A thermal transfer structure (TTS) formed from semiconductor material, such as silicon, is used to absorb and dissipate heat from stacked dies, featuring a cavity and recessed surface for efficient heat transfer and adhesion, with underfill material and conductive elements to enhance thermal conductivity and manage thermal expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If vertically stacked semiconductor dies are used to increase processing power without increasing package footprint, then the functional capacity increases, but heat dissipation becomes difficult and operating temperatures increase
Solution Approach 1:
A thermal transfer structure (TTS) made of semiconductor material is introduced as an intermediary between the stacked dies and the heat sink. The TTS includes a cavity that receives the dies and a recessed surface that improves thermal contact, effectively mediating heat transfer from the high-density die stack to the cooling system, thereby resolving the temperature increase issue while maintaining high processing power
Solution Approach 2:
The thermal transfer structure utilizes composite material construction, combining semiconductor material with specific geometric features (cavity and recessed surface) to create a structure that optimizes both mechanical support and thermal conduction. This composite approach allows efficient heat dissipation while maintaining the compact vertical stacking configuration
2Area of stationary object
If vertically stacked semiconductor dies are used to reduce package footprint, then the area occupied decreases, but heat dissipation efficiency deteriorates
Solution Approach 1:
The invention transitions from two-dimensional heat dissipation (lateral spreading) to three-dimensional heat management by introducing a vertical thermal transfer path. The TTS cavity and recessed surface create a multi-dimensional thermal conduction pathway that efficiently removes heat from the stacked dies without increasing the package footprint, thus maintaining compact area while improving heat dissipation efficiency
Solution Approach 2:
The thermal transfer structure serves as a mediator between the compact die stack and the heat sink, enabling efficient thermal coupling in the vertical dimension. This intermediary structure allows the package to maintain small footprint while achieving effective heat dissipation through the TTS's thermal conduction properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively lowers operating temperatures of semiconductor dies by improving heat dissipation, maintaining adhesion at high temperatures, and reducing the footprint of thermal management components, thus preventing overheating in densely packed semiconductor packages.
Implementation Method 1
A thermal transfer structure (TTS) formed from semiconductor material, such as silicon, is used to absorb and dissipate heat from stacked dies
Implementation Method 2
with underfill material and conductive elements to enhance thermal conductivity and manage thermal expansion
Implementation Method 3
A thermal transfer structure (TTS) formed from semiconductor material, such as silicon, is used to absorb and dissipate heat from stacked dies
Data Source
AI summary
Semiconductor device assemblies with heat transfer structures formed from semiconductor materials are disclosed herein. In one embodiment, a semiconductor device assembly can include a thermal transfer structure formed from a semiconductor substrate. The thermal transfer structure includes an inner region, an outer region projecting from the inner region, and a cavity defined in the outer region by the inner and outer regions. The semiconductor device assembly further includes a stack of first semiconductor dies in the cavity, and a second semiconductor die attached to the outer region of the thermal transfer structure and enclosing the stack of first semiconductor dies within the cavity.