Semiconductor Chamber Heater Protection via Carbon Layer
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Solution Overview
Problem
Conventional semiconductor chamber cleaning methods using gas plasma can damage the heater at the bottom of the chamber, affecting its uniformity and longevity.
Innovation Solution
A method involving a carbon deposition step to form a carbon layer on the heater and sidewalls of the chamber, followed by a plasma cleaning step to remove the residual layers and carbon layer simultaneously, thereby protecting the heater from damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas plasma cleaning is performed to remove residual layers from the chamber sidewall, then cleaning effectiveness is improved, but the heater at the bottom of the chamber is damaged
Solution Approach 1:
A carbon layer is deposited as an intermediary protective layer on the heater surface before plasma cleaning. This carbon layer acts as a mediator that absorbs the harmful effects of plasma on the heater while still allowing effective removal of residual layers from the chamber sidewall during the same cleaning process.
Solution Approach 2:
The carbon layer is deposited in advance before the plasma cleaning step. This preliminary action prepares the heater surface with a protective coating that will prevent damage during the subsequent plasma cleaning process, allowing the heater to withstand the cleaning conditions without degradation.
2Reliability
If additional carbon layer deposition is performed before cleaning, then heater protection is improved, but process time is increased
Solution Approach 1:
The carbon layer deposition and the cleaning process are merged into a single integrated operation. The carbon layer is deposited and then immediately utilized as the protective layer during plasma cleaning in the same chamber without breaking vacuum, combining two steps into one continuous process that eliminates intermediate time losses.
Solution Approach 2:
The process maintains continuous vacuum conditions throughout carbon layer deposition and plasma cleaning without vacuum breaking. This continuity eliminates the time required for vacuum breaking and re-establishment, allowing the protective layer to be formed and then immediately used in the cleaning process without interruption.
3Adaptability or versatility
If vacuum breaking and re-establishment are required for carbon layer deposition and cleaning, then process flexibility is improved, but productivity is reduced
Solution Approach 1:
The method maintains continuous vacuum conditions throughout the entire process sequence of carbon layer deposition and plasma cleaning. By eliminating vacuum breaking and re-establishment steps, the process achieves uninterrupted operation that significantly improves productivity while maintaining the flexibility to handle different cleaning requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents heater damage during chamber cleaning, improves the removal rate of residual layers, and enhances process efficiency by eliminating the need for vacuum breaking and loading/unloading of additional components.
Implementation Method 1
performing a carbon deposition step to at least form a carbon layer on the surface of the heater
Implementation Method 2
performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the bottom surface
Data Source
AI summary
The invention provides a semiconductor cleaning step, which comprises the following steps: providing a chamber with a bottom surface and a sidewall, the chamber contains a heater on the bottom surface, performing a first deposition step to leave a residual layer on the sidewall of the chamber, performing a carbon deposition step to form a carbon layer on at least the surface of the heater, and performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the bottom surface.