Semiconductor Device High-Voltage Operation
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Solution Overview
Problem
Current high-voltage MOSFETs for semiconductor devices have limitations in achieving sufficient breakdown voltage, necessitating the development of semiconductor devices capable of higher voltage operations to meet increasing performance requirements.
Innovation Solution
A semiconductor device structure comprising multiple well regions and gate structures with specific conductivity types, along with isolation elements and additional gate structures, is formed to enhance breakdown voltage by creating a more uniform electrical field and incorporating a capacitor structure, allowing for higher voltage operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional high-voltage MOSFET structures are used, then device fabrication can proceed with standard processes, but the breakdown voltage is insufficient to meet increasing performance requirements
Solution Approach 1:
The device is divided into multiple well regions (first well region with second conductivity type, second well region with first conductivity type) and multiple gate structures (first gate structure, second gate structure). This segmentation allows the electrical field to be distributed across multiple regions, increasing the breakdown voltage by preventing field concentration in a single region.
Solution Approach 2:
The second well region is formed within the first well region, creating a nested structure. The second gate structure is formed over portions of the first gate structure, well regions, and doped regions. This nesting allows multiple functional regions to be integrated in a compact arrangement while maintaining the field distribution benefits.
2Reliability
If the breakdown voltage is increased to meet performance requirements, then high-voltage operation capability is improved, but the device structure becomes more complex
Solution Approach 1:
The first gate structure serves multiple functions: it acts as a gate for the transistor and also as part of the capacitor structure when combined with the second gate structure. The well regions serve both as transistor components and as field distribution elements. This multi-functionality reduces the need for separate dedicated components.
Solution Approach 2:
The transistor structure and capacitor structure are merged into a single integrated device. The first gate structure and well regions are shared between the transistor function and the capacitor function, allowing both high-voltage operation and energy storage capabilities in one device without requiring completely separate structures.
3Reliability
If multiple well regions and gate structures are incorporated to increase breakdown voltage, then manufacturing precision requirements increase
Solution Approach 1:
The first well region and second well region are formed using sequential doping processes with predetermined patterns. The first gate structure is formed over predetermined portions of the well regions before the second gate structure is added. This preliminary formation of structures with predetermined geometries establishes a foundation that guides subsequent processing steps, ensuring proper alignment.
Solution Approach 2:
Different regions of the device have different doping concentrations and structural characteristics optimized for their specific functions. The first well region has different properties than the second well region, and the first gate structure has different characteristics than the second gate structure. This local optimization allows each region to contribute maximally to the overall breakdown voltage while maintaining manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure enables semiconductor devices to operate at significantly higher voltages, up to 100-1100% higher than conventional devices, by optimizing the electrical field distribution and incorporating a capacitor, thus addressing the limitations of existing high-voltage MOSFETs.
Implementation Method 1
incorporating a capacitor structure, allowing for higher voltage operations
Implementation Method 2
enhance breakdown voltage by creating a more uniform electrical field
Data Source
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AI summary
A semiconductor device capable of high-voltage operation includes a semiconductor substrate, a first well region, a second well region, a first gate structure, a first doped region, a second doped region, and a second gate structure. The first well region is formed in a portion of the semiconductor substrate. The second well region is formed in a portion of the first well region. The first gate structure is formed over a portion of the second well region and a portion of the first well region. The first doped region is formed in a portion of the second well region. The second doped region is formed in a portion of the first well region. The second gate structure is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.