Semiconductor Inline Testing via High-Voltage Leakage Measurement

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Solution Overview

Problem

Current semiconductor testing methods fail to effectively identify defects in high-voltage applications, particularly in capacitors, leading to reliability issues and increased failure rates, which are costly and challenging to address, especially in safety-critical applications.

Innovation Solution

A method involving inline testing where a test voltage higher than the operational voltage is applied through contact pads to measure leakage current, allowing for the identification of defects without damaging other components, and enabling the separation of ground lines to isolate components for testing, thereby improving defect detection and reducing manufacturing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional testing methods are used, then manufacturing process is simple, but defect detection accuracy is insufficient leading to reliability issues

Engineering Contradiction:
Improvedefect detection accuracyVSAvoidtesting circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The testing method segments the semiconductor device into testable units by introducing separate test access nodes (first node and second node) that can independently access specific components. This segmentation allows targeted testing of individual components without requiring complex restructuring of the entire device, thereby improving defect detection accuracy while controlling testing circuit complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces intermediary test access nodes that serve as mediators between the external testing equipment and the internal components of the semiconductor device. These intermediate nodes provide controlled access to specific components for applying test voltages and measuring leakage currents, enabling accurate defect detection without directly complexifying the core device structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If high voltage is applied for testing, then defect detection capability improves, but risk of damaging components increases

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidcomponent damage risk
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The testing method applies high voltage locally only to the specific component being tested by routing the test voltage through selected test access nodes. Other components in the device operate at their normal voltages, ensuring that the high test voltage does not propagate and damage other parts of the device. This localized application of stress enables accurate defect detection while minimizing damage risk to non-tested components.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent performs preliminary configuration of test access nodes and routing before applying high test voltages. The test circuit is prepared in advance to ensure that high voltage is applied only to the intended target component through properly configured paths. This preliminary setup prevents accidental damage to other components by ensuring correct voltage routing before the actual stress testing begins.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If burn-in process is used for reliability testing, then product reliability improves, but manufacturing cost and time increase significantly

Engineering Contradiction:
Improveproduct reliabilityVSAvoidmanufacturing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs reliability testing as a preliminary action during the manufacturing process itself, rather than requiring a separate post-manufacturing burn-in process. By integrating the testing into the fabrication flow using test access nodes configured during manufacturing, the method detects potential failures early before the device is completed, eliminating the need for time-consuming burn-in processes and reducing total manufacturing time.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The testing method applies excessive test voltages (higher than normal operating voltages) to components during manufacturing to induce potential failures. This partial stress testing is applied only to specific components through test access nodes, not to the entire device for extended periods. The excessive voltage reveals defects quickly without requiring long-duration burn-in, thus maintaining reliability improvement while significantly reducing testing time.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively detects potential failures in semiconductor components, especially capacitors, with high accuracy and efficiency, reducing the need for costly burn-in processes and improving reliability without significant area penalties, thus enhancing the manufacturing process for safety-critical applications.

Implementation Method 1

A leakage current is measured through the component to be tested in response to the test voltage

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS20150179534A1Testing of Semiconductor Components and Circuit Layouts Therefor
Publication Date: 2015.06.25 INFINEON TECHNOLOGIES AG
  • US20150179534A1 patent drawing
  • US20150179534A1 patent drawing
  • US20150179534A1 patent drawing

AI summary

In one embodiment of the present invention, a method of forming a semiconductor device includes performing a test during the forming of the semiconductor device within and/or over a substrate. A first voltage is applied to a first node coupled to a component to be tested in the substrate and a test voltage at a pad coupled to the component to be tested through a second node. The test voltage has a peak voltage higher than the first voltage. The component to be tested is coupled between the first node and the second node. A leakage current is measured through the component to be tested in response to the test voltage. After performing the test, the second node is connected to a functional block in the substrate. The first node is coupled to a third node coupled to the functional block.