Semiconductor Termination Structure for Hole Current Suppression
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Solution Overview
Problem
Current semiconductor devices face challenges in managing hole current and electric field distribution, particularly in the termination region, leading to reduced breakdown voltage and increased on-resistance due to excessive hole current inflow and current concentration at specific locations, which affects the efficiency and reliability of the device.
Innovation Solution
The semiconductor device incorporates a fourth semiconductor region with a specific impurity concentration and geometry, positioned to suppress hole current inflow and electric field concentration, along with a conductive region arrangement that disperses avalanche breakdown points, thereby enhancing breakdown voltage and reducing on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the cell region is downscaled to improve integration density, then productivity increases, but hole current inflow and avalanche breakdown increase causing reliability degradation
Solution Approach 1:
A fourth semiconductor region of a second conductivity type is introduced as an intermediary structure between the cell region and termination region. This intermediate region acts as a mediator to gradually transition the electric field distribution, preventing direct concentration at the junction between the cell region and termination region, thereby suppressing avalanche breakdown while maintaining downscaled cell region dimensions.
Solution Approach 2:
The fourth semiconductor region extends in the depth direction (perpendicular to the surface) beyond the termination region, creating a three-dimensional field distribution. This depth-direction extension allows the electric field to be dispersed vertically, reducing horizontal current concentration and suppressing avalanche breakdown effects.
2Productivity
If the cell region is downscaled to improve integration density, then productivity increases, but on-resistance increases due to hole current inflow
Solution Approach 1:
The fourth semiconductor region serves as an intermediate structure that modifies the electric field distribution in the termination region. By introducing this intermediate zone with specific conductivity type and impurity concentration, hole current inflow is suppressed and current paths are optimized, thereby reducing on-resistance despite the downscaled cell region.
3Reliability
If semiconductor regions are added to control hole current, then reliability improves, but device complexity increases
Solution Approach 1:
The fourth semiconductor region is strategically positioned only in specific areas where hole current control is most critical - at the boundary between the cell region and termination region. This localized approach provides effective hole current suppression and avalanche breakdown prevention without requiring comprehensive modification of the entire device structure, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses hole current and electric field concentration, improving breakdown voltage and reducing on-resistance, while allowing for downscaled cell regions and reduced current concentration, thus enhancing the overall performance and reliability of the semiconductor device.
Implementation Method 1
suppress hole current and electric field concentration
Implementation Method 2
disperses avalanche breakdown points, thereby enhancing breakdown voltage
Data Source
AI summary
A semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a second electrode, a conductive part, and a fourth semiconductor region. The first semiconductor region is located above the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The second electrode is located on the second and third semiconductor regions. The second electrode is electrically connected with the second and third semiconductor regions. The conductive part includes a first conductive region and a second conductive region. The first conductive region faces the first to third semiconductor regions via an insulating film. The second conductive region is located around the second electrode. The fourth semiconductor region is located around the second semiconductor region. The fourth semiconductor region is electrically connected with the second semiconductor region.