Semiconductor Hollow-Body Structure Moisture Resistance
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Solution Overview
Problem
The formation of a hollow-body structure in semiconductor devices is hindered by weak and nonuniform adhesion between resin layers, leading to moisture ingress and degradation of moisture resistance, especially during high-temperature and high-pressure resin mold sealing, which degrades high-frequency characteristics.
Innovation Solution
A semiconductor apparatus with a first resin structure member covering a specific electrode and a second resin structure member with lower permittivity than the first, both separated from the electrode, and an insulation film with lower moisture permeability than the second resin, forming a stable hollow-body structure that prevents adhesion failure and reduces parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a resin mold seal is performed under high-temperature and high-pressure to achieve miniaturization and lower prices, then the packaging cost and size are reduced, but the adhesion property of the resin structure is destroyed and mold resin enters into the hollow-body structure
Solution Approach 1:
The patent employs a composite structure consisting of a resin hollow-body and an insulating material layer. The insulating material (such as ceramic or glass) is applied over the resin hollow-body to provide enhanced mechanical strength and resistance against high-temperature and high-pressure processing. This composite approach allows the device to withstand mold seal conditions while maintaining the low-parasitic-capacitance benefits of the resin hollow-body structure.
2Ease of manufacture
If bonding pressure at the time of bonding a second resin layer onto a first resin layer is weak or nonuniform, then the bonding process is easier, but the adhesion property becomes weak and bonding peels off forming ingress paths for water moisture
Solution Approach 1:
The patent applies different material properties to different layers: the insulating material layer is specifically designed with high density and low moisture permeability to seal the interface between resin layers. This local enhancement at the bonding interface prevents moisture ingress without requiring high bonding pressure throughout the entire structure, thus maintaining both ease of manufacture and moisture resistance.
3Reliability
If a resin hollow-body structure is formed to reduce parasitic capacitance and improve high-frequency characteristics, then the electrical performance is enhanced, but the structure becomes vulnerable to moisture ingress and adhesion failure
Solution Approach 1:
The insulating material layer acts as an intermediary protective barrier between the resin hollow-body structure and the external environment. This intermediate layer provides mechanical reinforcement and moisture protection to the resin structure, allowing it to maintain its electrical performance benefits while being protected from environmental degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances moisture resistance and high-frequency characteristics by preventing bonding failure and reducing parasitic capacitance between electrodes and wiring-interconnects, ensuring the integrity of the hollow-body structure.
Implementation Method 1
a second resin structure member, having permittivity smaller than or equal to permittivity of the first resin structure member, covering an outer lateral side of the first resin structure member
Implementation Method 2
an insulation film, having moisture permeability lower than that of the second resin structure member, covering an outer lateral side of the second resin structure member
Data Source
AI summary
In a semiconductor apparatus, the apparatus is so arranged as to comprise: a semiconductor device having electrodes and wiring-interconnects on a main surface of a semiconductor chip; a first resin structure member, being placed on a side of the main surface of the semiconductor chip, constituting, in lateral and upward directions of a specific electrode of the semiconductor device, a hollow-body structure between the specific electrode and the first resin structure member; a second resin structure member covering an outer lateral side of the first resin structure member, and having the permittivity smaller than or equal to the permittivity of the first resin structure member; and an insulation film covering an outer lateral side of the second resin structure member, and having moisture permeability lower than that of the second resin structure member.


