Semiconductor Structure Horizontal Doping for Gate Control
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Solution Overview
Problem
The existing semiconductor structures face challenges in achieving optimal controllability of the gate due to difficulties in controlling the doping concentration and operating space as semiconductor sizes decrease, leading to undesirable gate performance.
Innovation Solution
A method is introduced where a first semiconductor layer with a trench region and a to-be-doped region is formed on a substrate, with a word line surrounding the sidewall surface of the trench region, and a doping body portion is created to diffuse dopant ions horizontally, increasing the doping area and controlling the doping concentration progressively, thereby enhancing gate controllability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If vertical doping is used to form doped regions, then the doping process is simple, but the doping concentration cannot be controlled and the operating space is limited as semiconductor size decreases
Solution Approach 1:
The patent transitions from vertical doping (one-dimensional) to horizontal doping (two-dimensional) by forming a doping body portion that extends along the first direction and diffuses dopant ions laterally into the to-be-doped region. This dimensional change enables better control of doping concentration and provides additional operating space for doping processes in scaled-down semiconductor structures.
2Productivity
If gate size is decreased to increase memory integration capacity, then more memories can be integrated on a chip, but gate controllability deteriorates
Solution Approach 1:
The patent applies local quality by creating a doping body portion with specific geometric characteristics (width, height, length) that are optimized for the local to-be-doped region. The doping body portion has a width in the first direction that is greater than the width of the to-be-doped region, ensuring localized and controlled dopant ion diffusion that improves gate controllability while maintaining high integration capacity.
3Manufacturing precision
If doping body portion width is increased to improve dopant ion diffusion, then doping concentration control is enhanced, but the structure becomes more complex
Solution Approach 1:
The patent applies preliminary action by pre-forming the doping body portion with optimized geometric dimensions before the actual doping process. The doping body portion is prepared in advance with a width in the first direction that is greater than the to-be-doped region width, so that when dopant ions diffuse during annealing, the concentration distribution is already optimized, reducing the need for complex post-processing adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides better controllability of the gate by reducing the threshold voltage and preventing current leakage due to a stronger electric field, while allowing for more efficient integration and performance of semiconductor structures.
Implementation Method 1
performing an annealing, such that the first dopant ions diffuse to the to-be-doped region, the to-be-doped region is converted into a doped region
Implementation Method 2
performing an annealing, such that the first dopant ions diffuse to the to-be-doped region
Data Source
AI summary
Embodiments of the present disclosure relate to the field of semiconductors, and in particular to a method of manufacturing a semiconductor structure, a semiconductor structure and a memory. The method of manufacturing a semiconductor structure includes: forming a first semiconductor layer on a substrate, the first semiconductor layer including a first trench region and a to-be-doped region on two opposite sides of the first trench region; forming a word line, the word line surrounding a sidewall surface of a part of the first semiconductor layer in the first trench region, and at least a part of a projection of a part of the first semiconductor layer in the to-be-doped region on a surface of the substrate coinciding with a projection of the word line on the surface of the substrate; forming a doping body portion, the doping body portion including first dopant ions.