Semiconductor Device Eliminating Hot Holes in Channel
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Solution Overview
Problem
Semiconductor memory devices face challenges in preventing the generation or introduction of hot holes in the channel during operations, which can affect the stability and efficiency of read operations.
Innovation Solution
The semiconductor memory device includes a memory unit with a block decoder circuit, a pass circuit unit, and a voltage supply circuit, where the pass circuit unit connects and disconnects global word lines from memory blocks based on selection signals, and applies operating voltages and set voltages to maintain higher potential levels, and the voltage supply circuit generates and applies positive voltages to global word lines after operations to prevent potential drops.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the pass circuit unit connects global word lines to memory blocks during operations, then read operations can be performed, but hot holes are generated or introduced in the channel
Solution Approach 1:
The patent applies preliminary action by floating the word lines of unselected memory blocks before the read operation is completed. This preliminary floating action prevents hot holes from being generated or introduced in the channel during and after the operation, while still allowing the read operation to proceed normally. The control logic circuits deactivate the pass circuit units to float the word lines in advance before the operation completes.
2Loss of energy
If the pass circuit unit is deactivated after operations, then power is saved, but potential levels of word lines drop
Solution Approach 1:
The patent uses preliminary action by maintaining the floating state of word lines through control logic circuits that keep pass circuit units deactivated for a predetermined time after operations complete. This ensures potential levels remain stable and hot holes are prevented, while allowing power savings to take effect.
Solution Approach 2:
The patent applies dynamics by dynamically controlling the state of pass circuit units based on operation timing. During operations, pass circuit units are activated to connect global word lines to memory blocks. After operations complete, control logic circuits deactivate them to float the word lines, creating a dynamic switching behavior that balances power consumption with potential level stability.
3Reliability
If operating voltages are applied continuously to global word lines, then read operations are stable, but power consumption increases
Solution Approach 1:
The patent applies periodic action by controlling the activation and deactivation of pass circuit units in time-based periods. During read operations, pass circuit units are activated to apply operating voltages to global word lines for stable operations. After operations complete, control logic circuits deactivate them to float the word lines, creating a periodic on-off pattern that reduces power consumption while maintaining reliability during active operations.
Solution Approach 2:
The patent uses dynamics to switch between two states: an active state where pass circuit units are enabled and operating voltages are applied for stable read operations, and an inactive state where pass circuit units are disabled to reduce power consumption. The control logic circuits dynamically transition between these states based on operation timing, optimizing the balance between reliability and energy usage.
Data Source
AI summary
A semiconductor device and or method of operating the same may be provided. The semiconductor device may include a pass circuit unit configured to connect global signal lines to signal lines to set voltage levels of the signal lines.