Semiconductor Housing Fragile Unit for Controlled Pressure Release

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Solution Overview

Problem

Pressure contact type semiconductor devices can experience uncontrolled explosions due to increased temperature or pressure after semiconductor element failure, causing damage to surrounding circuits and cooling devices, leading to system inoperability.

Innovation Solution

Incorporation of a fragile unit within the housing that ruptures or melts at lower pressure and temperature than other components, preventing uncontrolled explosions by releasing pressure and reducing secondary damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a pressure contact type semiconductor device is used to achieve high reliability and redundancy, then the device can continue operating after semiconductor element failure, but uncontrolled explosions can occur due to temperature and pressure increases leading to system inoperability

Engineering Contradiction:
Improveoperational continuityVSAvoidexplosion damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A fragile unit is pre-installed within the housing structure at a location where pressure and temperature build-up occurs during semiconductor element failure. This fragile unit is designed to rupture at a predetermined threshold before explosive pressures develop, proactively preventing the harmful explosion effect while maintaining device reliability through controlled failure

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The fragile unit acts as an intermediary component between the semiconductor element and the housing structure. It mediates the pressure and temperature build-up by providing a controlled rupture path, preventing direct transmission of explosive forces to the housing and surrounding system components

Inventive Principle:
Principle #24Intermediary (Mediator)

2Strength

If the housing structure is made strong to contain pressure, then structural integrity is maintained, but uncontrolled explosions can damage surrounding circuits and cooling devices

Engineering Contradiction:
Improvehousing integrityVSAvoidexplosion pressure
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The potential harmful effect of pressure build-up during semiconductor element failure is converted into a beneficial controlled rupture event. The fragile unit is designed to rupture at a safe pressure threshold, transforming what would be a dangerous uncontrolled explosion into a controlled pressure release that protects the housing and surrounding system

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device achieves high reliability by suppressing explosions and limiting secondary damage by intentionally designing a weak seal that breaks before the device explodes, allowing for controlled failure and reduced damage to surrounding components.

Implementation Method 1

Incorporation of a fragile unit within the housing that ruptures or melts at lower pressure and temperature than other components

Methodology Applied
Scientific EffectMelting: Melting

Implementation Method 2

a fragile unit within the housing that ruptures or melts at lower pressure and temperature than other components

Methodology Applied
Scientific EffectRupture: Fracture Mechanics

Data Source

PatentUS9559027B2Semiconductor device and semiconductor module
Publication Date: 2017.01.31 KK TOSHIBA
  • US9559027B2 patent drawing
  • US9559027B2 patent drawing
  • US9559027B2 patent drawing

AI summary

A semiconductor device includes a housing with a fragile portion. The fragile unit or portion has a resistance to a pressure or a melting point temperature that is lower than other portions of the housing. The semiconductor device further includes a plurality of semiconductor elements disposed inside the housing. Each semiconductor element includes a semiconductor element region having a first surface and a second surface opposite to the first surface. A first electrode is provided on the first surface and a second electrode is provided on the second surface.