Semiconductor Housing Cleaning for Molybdenum Deposition Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Deposition of molybdenum on the inner walls and components of semiconductor manufacturing apparatuses leads to particle deposition on substrates during the formation of a molybdenum metal layer, which affects the yield and quality of semiconductor devices.
Innovation Solution
A method involving the use of chlorine-containing gases, such as Cl2, to react with and remove the deposited molybdenum film, combined with heating the apparatus components to maintain high vapor pressure of the reaction products, thereby preventing re-deposition and ensuring effective cleaning of the apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If molybdenum is used to form a metal layer on the substrate, then the electrical conductivity is improved, but molybdenum deposits on the inner walls and components of the apparatus, causing particle contamination
Solution Approach 1:
The patent converts the harmful molybdenum deposition into a beneficial cleaning opportunity by introducing chlorine gas that reacts with the deposited molybdenum to form volatile molybdenum chloride, which is then removed by heating. This transforms the contamination problem into a controlled chemical reaction that cleans the apparatus while maintaining the desired metal layer on the substrate.
Solution Approach 2:
The patent changes the chemical environment by introducing chlorine gas and adjusting temperature parameters. By controlling the temperature to maintain high vapor pressure of molybdenum chloride and using chlorine-containing gases, the system transforms the deposition state into a removable volatile state, effectively eliminating particle contamination while preserving the functional metal layer.
2Object-generated harmful factors
If the apparatus is cleaned to remove molybdenum deposits, then particle contamination is reduced, but the cleaning process complexity increases
Solution Approach 1:
The patent implements a self-service cleaning mechanism where the apparatus uses its own gas supply system to introduce chlorine gas that automatically reacts with and removes molybdenum deposits. The heating system, already present for substrate processing, is utilized to maintain the vapor pressure needed for effective cleaning. This eliminates the need for separate mechanical cleaning equipment or complex disassembly procedures.
Solution Approach 2:
The patent introduces chlorine gas as an intermediary substance that mediates between the molybdenum deposits and the removal process. The chlorine acts as a chemical intermediary that transforms solid molybdenum into volatile molybdenum chloride, which can then be easily removed by the existing gas exhaust system, simplifying the overall cleaning process.
3Object-generated harmful factors
If the substrate temperature is increased to prevent molybdenum re-deposition, then the cleaning effectiveness is improved, but the energy consumption increases
Solution Approach 1:
The patent utilizes phase transitions by controlling the temperature to maintain molybdenum chloride in a gaseous state with high vapor pressure. By heating the apparatus components to above room temperature (specifically maintaining temperatures where molybdenum chloride vapor pressure is sufficiently high), the system ensures that removed molybdenum remains in vapor phase and is carried away by the gas flow, preventing re-deposition while using minimal additional energy beyond the base heating requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents the deposition of molybdenum particles on substrates, maintaining the integrity and yield of semiconductor devices by effectively removing molybdenum from the apparatus surfaces and preventing re-deposition.
Implementation Method 1
supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing
Implementation Method 2
heating the apparatus components to maintain high vapor pressure of the reaction products, thereby preventing re-deposition
Data Source
AI summary
A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.