Semiconductor High Voltage Generator Discharge Circuit
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face issues with power consumption and voltage requirements, where an external voltage is insufficient for operations like program or erase operations in NAND flash memory devices, necessitating a high voltage generator, but abnormal power drops can lead to voltage stress and deteriorated electrical characteristics due to uncontrolled high voltage retention.
Innovation Solution
A semiconductor device incorporating a high voltage generator and a discharge circuit that includes diodes and transistors to manage and discharge high voltages when the power source voltage drops, ensuring stable voltage levels and minimizing stress on peripheral circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a high voltage generator is used to generate high voltage from external voltage, then the semiconductor device can perform program and erase operations, but the electrical characteristics deteriorate when power source voltage drops abnormally
Solution Approach 1:
The discharge circuit is configured to automatically discharge high voltage when power source voltage drops, preventing the harmful effect of voltage collapse before it can damage the circuit. The diode and transistor arrangement creates a protective mechanism that activates preemptively upon voltage drop detection.
Solution Approach 2:
The discharge circuit acts as an intermediary protective layer between the high voltage generator and the peripheral circuits. When voltage drops occur, this intermediary component safely dissipates the high voltage, protecting the internal circuits from direct exposure to unstable voltage conditions.
2Productivity
If high voltage is generated internally for program and erase operations, then operational capability is improved, but stress on circuits increases when power source voltage drops
Solution Approach 1:
The discharge circuit converts the harmful effect of voltage drop into a beneficial protective action. When power source voltage drops abnormally, the discharge circuit automatically activates to discharge high voltage, transforming what would be a damaging event into a controlled protective response that prevents circuit stress.
Solution Approach 2:
The circuit design includes preliminary protective measures through the discharge circuit configuration. The diode and transistor arrangement is pre-configured to detect voltage drops and initiate discharge action before the voltage collapse can cause harm to peripheral circuits.
3Reliability
If discharge circuit is added to handle abnormal voltage drops, then reliability is improved, but device complexity increases
Solution Approach 1:
The discharge circuit is designed to operate autonomously without requiring external control signals. The diode and transistor arrangement automatically detects power source voltage drops and initiates discharge action on its own, eliminating the need for additional control logic and reducing overall system complexity.
Solution Approach 2:
The discharge function is integrated directly into the existing high voltage generator circuit structure. The discharge circuit shares components and space with the high voltage generation circuit, combining protective functionality with the existing architecture rather than adding completely separate protective equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively generates and manages high voltages within semiconductor devices, ensuring stable operation and minimizing electrical characteristic deterioration even during abnormal power drops, thereby improving the overall performance and longevity of the semiconductor device.
Implementation Method 1
The discharge circuit includes a first diode configured to have an enable signal supplied thereto, a transistor configured to have a drain coupled to the output node of the high voltage generator and a gate coupled to the output terminal of the first diode, and a second diode coupled between the source of the first transistor and a power source voltage terminal to which the power source voltage is supplied.
Data Source
AI summary
A semiconductor device includes a high voltage generator for generating a high voltage by raising a power source voltage, a transfer circuit for transferring the high voltage to an internal circuit in response to a transfer signal, and a first discharge circuit for discharging the high voltage of an output node of the high voltage generator or the high voltage of an input node or output node of the transfer circuit when the power source voltage drops.