Semiconductor Device High Voltage Generator Merging

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Solution Overview

Problem

The existing semiconductor devices consume high current during program operations due to the increased capacitance between bit lines, especially at the early stage of programming, where the number of program data '0' is greater, leading to peak current surges.

Innovation Solution

The semiconductor device employs a page buffer control circuit with a single high voltage generator and voltage dividers that adjust the driving force based on the number of programmed cells, generating page buffer control signals to manage bit line precharging and selection, reducing the peak current by varying the capacitance as data changes from '0' to '1'.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If multiple high voltage generators are used to rapidly charge bit lines, then the operating speed is increased, but the current consumption is increased

Engineering Contradiction:
Improveoperating speedVSAvoidcurrent consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent combines multiple high voltage generators into a single shared high voltage generator. This single generator supplies voltage to multiple page buffer control circuits through shared voltage supply lines, eliminating the need for separate generators for each circuit. The merging reduces the total number of high voltage generators while maintaining the ability to rapidly charge bit lines during program operations, thereby reducing current consumption without sacrificing operating speed.

Inventive Principle:
Principle #5Merging (Combining)

2Use of energy by moving object

If the number of high voltage generators is reduced to decrease current consumption, then the operating speed may be decreased, but the current consumption is reduced

Engineering Contradiction:
Improvecurrent consumptionVSAvoidoperating speed
Core Design Contradiction:
Use of energy by moving objectVSSpeed

Solution Approach 1:

The patent makes the single high voltage generator universal by enabling it to serve multiple page buffer control circuits simultaneously. The shared voltage supply architecture allows one high voltage generator to perform the function that previously required multiple generators, reducing current consumption while maintaining the rapid charging capability needed for high operating speed during program operations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Device complexity

If a single high voltage generator is used to reduce device complexity, then the operating speed may be decreased, but the device complexity is reduced

Engineering Contradiction:
Improvenumber of high voltage generatorsVSAvoidoperating speed
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The patent merges multiple high voltage generators into a single unit that serves all page buffer control circuits. This consolidation reduces device complexity by eliminating redundant generators and their associated control circuits. The shared architecture maintains rapid charging capability through efficient voltage distribution, preserving operating speed while significantly reducing the number of high voltage generators in the device.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The single high voltage generator is designed with universal functionality to supply voltage to multiple page buffer control circuits simultaneously. This multi-functional design allows one generator to replace multiple specialized generators, reducing device complexity while maintaining the performance required for high-speed operation during program and verify operations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS8923055B2Semiconductor device and method of operating the same
Publication Date: 2014.12.30 SK HYNIX INC
  • US8923055B2 patent drawing
  • US8923055B2 patent drawing
  • US8923055B2 patent drawing

AI summary

A semiconductor device includes cell strings that each include a plurality of memory cells, a page buffer having latches coupled to bit lines and precharge the bit lines in response to page buffer control signals, a page buffer control circuit configured to generate the page buffer control signals using a high voltage source, and a controller configured to generate control signals for controlling the page buffer control circuit.