Semiconductor Hybrid Bonding After Oxide Purification
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Solution Overview
Problem
The formation of openings and delamination at the interface between bond pad metals in semiconductor dies due to poor thermal expansion and bonding strength, caused by oxidation, adversely affects the production yield of small outline integrated circuits (SoIC).
Innovation Solution
A purification process using an acidic and alkaline reactant to reduce metal oxides on bond pad metals to pure metal, followed by a hybrid bonding process to enhance bonding strength, and a subsequent dehydration reaction to form covalent bonds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bonding process is performed without purification treatment, then manufacturing process is simple, but metal oxide forms on bond pad metals causing poor bonding strength and thermal expansion
Solution Approach 1:
The purification treatment using acidic and alkaline reactants is performed before the bonding process to remove metal oxides from the bond pad metal surfaces. This preliminary action ensures that the bonding surfaces are clean and free from oxidation, thereby achieving strong bonding strength and proper thermal expansion without compromising process simplicity
Solution Approach 2:
The purification treatment creates a chemically controlled environment that prevents oxidation of the bond pad metals during the bonding process. By using acidic and alkaline reactants in sequence, the method establishes a protective chemical environment that maintains metal surface integrity and prevents harmful oxidation reactions
2Manufacturing precision
If metal oxide is present on bond pad metals, then manufacturing process is simple, but openings and delamination occur at bonding interface
Solution Approach 1:
The purification treatment using acidic and alkaline reactants is performed before bonding to remove metal oxides from the bond pad metal surfaces. This preliminary cleaning action ensures high bonding interface quality by eliminating oxidation-related defects such as openings and delamination, while maintaining manufacturing simplicity through an integrated process flow
Solution Approach 2:
The method converts the potentially harmful oxidation process into a beneficial purification process. By deliberately introducing controlled chemical reactions with acidic and alkaline reactants, metal oxides that would normally cause defects are transformed into removable substances, turning a harmful effect into a useful cleaning mechanism that improves bonding interface quality
3Reliability
If purification treatment with acidic and alkaline reactants is performed, then metal oxide is reduced to pure metal enhancing bonding strength, but process time and complexity increase
Solution Approach 1:
The purification treatment combines acidic and alkaline reactant steps into a single integrated process that simultaneously removes metal oxides and prepares the bonding surface. This merging of multiple treatment functions into one unified process reduces the total process time while achieving the desired purification effect that enhances bonding strength
Solution Approach 2:
The purification treatment uses continuous chemical reactions with acidic and alkaline reactants to progressively remove metal oxides from the bond pad surfaces. This continuous action ensures complete purification without requiring multiple separate processing stages, thereby reducing overall process time while maintaining high bonding strength through thorough oxide removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process effectively reduces metal oxide to pure metal, enhancing bonding strength and preventing defects, thereby improving the production yield of SoIC.
Implementation Method 1
treating the first semiconductor structure and the second semiconductor structure with an acidic reactant, so that metal oxide formed on the first conductive bonding feature and metal oxide formed on the second conductive bonding feature are reduced to pure metal
Implementation Method 2
a dehydration reaction to form covalent bonds
Data Source
AI summary
A method for manufacturing a semiconductor package device includes: forming a first semiconductor structure and a second semiconductor structure, the first semiconductor structure including a first dielectric bonding layer and a first conductive bonding feature disposed in the first dielectric bonding layer, the second semiconductor structure including a second dielectric bonding layer and a second conductive bonding feature disposed in the second dielectric bonding layer; treating the first and second semiconductor structures with an acidic reactant including an acid, so that metal oxide formed on each of the first conductive bonding feature and the second conductive bonding feature is reduced to pure metal; and bonding the first semiconductor structure to the second semiconductor structure so as to permit the first dielectric bonding layer to be bonded to the second dielectric bonding layer and to permit the first conductive bonding feature to be bonded to the second conductive bonding feature.