Semiconductor Carrier Profile Shaping With Hydrogen Implantation
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Solution Overview
Problem
Existing semiconductor technologies face challenges in adjusting carrier concentration distribution in N-type regions effectively, particularly in achieving high carrier concentrations and controlling carrier lifetime, which affects the performance of semiconductor devices.
Innovation Solution
A semiconductor device with a hydrogen-containing region is developed, where hydrogen is implanted and thermally treated to create high concentration regions with enhanced carrier concentrations, and a lifetime control region is formed using adjustment impurities like helium, allowing for precise control of carrier lifetime and distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If hydrogen is implanted in the semiconductor substrate to form an N type region, then carrier concentration is increased, but the carrier concentration distribution cannot be adjusted as appropriate
Solution Approach 1:
The hydrogen implantation process is divided into multiple steps with different implantation conditions (energy, dose, angle) to create distinct hydrogen concentration regions. This segmentation allows independent control of carrier concentration at different depths, resolving the contradiction between increasing overall carrier concentration and maintaining precise distribution control.
Solution Approach 2:
Different regions of the semiconductor substrate are given different hydrogen concentrations and activation ratios through selective implantation. The carrier concentration is locally optimized in each region while maintaining the overall N-type character, enabling precise control of carrier concentration distribution throughout the substrate.
2Reliability
If hydrogen concentration is increased to achieve high carrier concentration, then electrical conductivity is improved, but device complexity increases due to multiple implantation steps
Solution Approach 1:
Multiple hydrogen implantation steps are combined with thermal treatment processes to achieve both high carrier concentration and precise distribution control. The merging of implantation and annealing operations allows simultaneous optimization of electrical conductivity and spatial distribution, improving reliability without proportionally increasing complexity.
Solution Approach 2:
The implantation process parameters (energy, dose, angle, temperature) are systematically changed across different steps to achieve the desired carrier concentration profile. By controlling these parameters, high electrical conductivity is achieved in specific regions while the overall process complexity is managed through standardized parameter sets.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of semiconductor devices with tailored carrier concentration profiles, improving device performance by enhancing carrier concentration and lifetime control, leading to improved switching characteristics and avalanche withstand capabilities.
Implementation Method 1
a technique of forming an N type region by implanting hydrogen in a semiconductor substrate has been known
Implementation Method 2
performing thermal treatment on the semiconductor substrate to form, in the hydrogen containing region, a high concentration region with a higher carrier concentration
Data Source
AI summary
A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.