Semiconductor Substrate Hydrogen Profile for Depth-Wise Donor Control
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Solution Overview
Problem
Existing semiconductor manufacturing techniques face challenges in easily adjusting the doping concentration across the depth direction of a semiconductor substrate, limiting the flexibility in forming regions with specific electrical properties.
Innovation Solution
A semiconductor device with a hydrogen chemical concentration distribution featuring two peaks and intermediate regions, where the intermediate donor concentration is higher than surface concentrations, and a manufacturing method involving hydrogen implantation from both surfaces followed by heat treatment to create a controlled donor concentration profile.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen is implanted into a predetermined depth of a semiconductor substrate and diffused to increase doping concentration, then the doping concentration can be increased, but it is difficult to easily adjust the doping concentration over a wide range in the depth direction
Solution Approach 1:
The patent divides the hydrogen concentration distribution into multiple peaks at different depths (first hydrogen concentration peak and second hydrogen concentration peak) rather than using a single uniform distribution. This segmentation allows independent control of doping concentration at different depth regions, enabling wide-range adjustment of doping concentration in the depth direction while maintaining manufacturing precision.
Solution Approach 2:
The patent creates different hydrogen concentration characteristics at different locations: the first hydrogen concentration peak region has different donor concentration characteristics than the second hydrogen concentration peak region. The intermediate donor concentration between the peaks can be higher than surface donor concentrations, creating locally optimized electrical properties at each depth region while maintaining overall control flexibility.
2Manufacturing precision
If hydrogen implantation is performed to form donor regions, then doping concentration is increased, but damage to the semiconductor structure occurs
Solution Approach 1:
The patent performs hydrogen implantation at predetermined depths to create concentration peaks before final heat treatment and device formation. This preliminary action allows the semiconductor structure to be prepared with optimized doping profiles in advance, reducing the need for subsequent high-energy processing that could cause damage.
Solution Approach 2:
The patent uses hydrogen as an intermediary element that can be precisely controlled through implantation and diffusion to modify the electrical properties of the semiconductor substrate. By controlling hydrogen concentration distribution rather than directly implanting dopant atoms, the process achieves doping concentration adjustment with less structural damage compared to conventional dopant implantation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a wide range of doping concentration adjustments in the depth direction, enhancing the flexibility in forming regions with specific electrical properties and reducing damage to the semiconductor structure.
Implementation Method 1
hydrogen is implanted into a predetermined depth of a semiconductor substrate
Implementation Method 2
hydrogen is implanted into a predetermined depth of a semiconductor substrate and diffused
Data Source
AI summary
Provided is a semiconductor device which includes a semiconductor substrate that has an upper surface and a lower surface. A hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed closer to the lower surface side of the semiconductor substrate than the first hydrogen concentration peak. An intermediate donor concentration between the first hydrogen concentration peak and the second hydrogen concentration peak is different from any of an upper surface side donor concentration between the first hydrogen concentration peak and the upper surface of the semiconductor substrate and a lower surface side donor concentration between the second hydrogen concentration peak and the lower surface of the semiconductor substrate. The intermediate donor concentration may be higher than either the upper surface side donor concentration or the lower surface side donor concentration.