Semiconductor N-Type Region with Multi-Peak Hydrogen Doping
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor technologies face challenges in adjusting carrier concentration distribution in N-type regions, particularly in achieving a high carrier concentration with a specific peak structure and oxygen and carbon concentration profiles to optimize device performance.
Innovation Solution
A semiconductor device and manufacturing method involving a hydrogen-containing region with a high concentration region and a lifetime control region, where hydrogen is implanted and thermally treated to create a carrier concentration distribution with multiple peaks, and oxygen and carbon concentrations are optimized to enhance carrier concentration and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If hydrogen is implanted in the semiconductor substrate to form an N type region, then carrier concentration is increased, but the carrier concentration distribution cannot be precisely controlled
Solution Approach 1:
The N type region is divided into multiple concentration zones by creating a multi-peak hydrogen distribution. The hydrogen concentration is segmented into first peaks (deeper regions) and second peaks (shallower regions), allowing independent control of carrier concentration at different depths. This segmentation enables precise tailoring of the carrier concentration profile to meet specific device performance requirements.
Solution Approach 2:
Different regions of the N type region are given different hydrogen concentrations to achieve local optimization. The first peaks provide high carrier concentration in deeper regions for bulk properties, while the second peaks provide moderate carrier concentration in shallower regions for interface properties. This local quality differentiation allows simultaneous optimization of both bulk and interface device characteristics.
2Ease of manufacture
If a simple single-peak hydrogen distribution is used, then the manufacturing process is simple, but the device performance cannot be optimized for both bulk and interface characteristics
Solution Approach 1:
The hydrogen implantation is performed in multiple periodic steps with different energies. First hydrogen implantation creates the first peaks at deeper regions, then second hydrogen implantation creates the second peaks at shallower regions. This periodic action with varying parameters (energy, dose) enables creation of the multi-peak distribution while maintaining process control and repeatability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach allows for a tailored carrier concentration distribution, improving the performance of semiconductor devices by increasing carrier concentration and optimizing the width and position of peaks, thereby enhancing device characteristics such as switching behavior and avalanche withstand capability.
Implementation Method 1
a technique of forming an N type region by implanting hydrogen in a semiconductor substrate has been known
Implementation Method 2
performing thermal treatment on the semiconductor substrate to form, in the hydrogen containing region, a high concentration region with a higher carrier concentration
Data Source
AI summary
A semiconductor device includes a semiconductor substrate with an upper surface and a lower surface, including an n-type semiconductor region having a hydrogen containing region. A carrier concentration distribution representing a carrier concentration by a semi-logarithmic graph in the depth direction of the n-type semiconductor region includes a flat portion containing a first flat part and a second flat part located closer to the lower surface of the semiconductor substrate than the first plat part, and a slope located between the first flat part and the second flat part.