Semiconductor Substrate Hydrogen Ion Implantation Segmentation
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Solution Overview
Problem
Conventional semiconductor manufacturing methods face challenges in accurately controlling the distribution of hydrogen ions and lattice defects to achieve optimal doping concentrations, leading to variations in semiconductor device performance.
Innovation Solution
A method involving the implantation of hydrogen ions and subsequent annealing to form hydrogen donors, which diffuses to create multiple doping concentration peaks, controlling lattice defects and donor concentrations with high precision, thereby adjusting the semiconductor substrate's properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen ions are implanted into the semiconductor wafer to adjust the doping concentration, then the doping concentration can be controlled, but the distribution of hydrogen ions and lattice defects becomes difficult to control precisely
Solution Approach 1:
The patent divides the hydrogen ion implantation process into multiple sequential steps with different implantation conditions. First, hydrogen ions are implanted at a first acceleration energy to create initial lattice defects and hydrogen distribution. Then, additional hydrogen ions are implanted at a second acceleration energy (higher than the first) to create a second distribution that overlaps with the first. This segmentation allows precise control of the final hydrogen concentration profile and doping characteristics by independently optimizing each implantation step.
Solution Approach 2:
The patent performs preliminary hydrogen ion implantation to create lattice defects and establish an initial hydrogen distribution before performing the final implantation step. The preliminary implantation creates a foundation of lattice defects that guide the subsequent hydrogen diffusion and doping process, ensuring predictable and controllable final distribution patterns.
2Ease of manufacture
If conventional hydrogen ion implantation is used to adjust doping concentration, then the process is simple, but the semiconductor device performance varies due to imprecise control
Solution Approach 1:
The patent segments the implantation process into multiple steps with progressively higher acceleration energies. Each step targets specific depth regions and creates controlled lattice defect patterns. This segmented approach maintains ease of manufacture by using standard ion implantation equipment while achieving superior performance consistency through the cumulative effect of multiple controlled implantation events.
Solution Approach 2:
The patent systematically changes the acceleration energy parameter across implantation steps, starting with lower energy and progressing to higher energy. This parameter progression allows control over the depth and concentration profile of hydrogen ions and lattice defects, ensuring consistent doping characteristics and device performance while maintaining a straightforward manufacturing process.
3Length of stationary object
If multiple doping concentration peaks are formed through hydrogen diffusion, then the high-concentration region can be extended, but the process complexity increases
Solution Approach 1:
The patent uses segmented implantation steps at different acceleration energies to create multiple overlapping hydrogen distributions. Each implantation step contributes to forming doping concentration peaks at different depths. The segmentation strategy extends the high-concentration region along the depth direction while keeping each individual step relatively simple and well-controlled.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of doping concentrations and reduced lattice defects, enhancing the semiconductor device's performance and stability by extending the high-concentration region and minimizing variations.
Implementation Method 1
a first charged particle implantation step in which charged particles are implanted from a lower surface of the semiconductor substrate to a second depth position Z2
Implementation Method 2
hydrogen donors, which diffuses to create multiple doping concentration peaks
Data Source
AI summary
Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type; a high-concentration region of a first conductivity type; and a lower surface region of a first conductivity type or a second conductivity type, wherein a shallowest doping concentration peak closest to the lower surface of the semiconductor substrate among the doping concentration peaks of the buffer region is a concentration peak of a hydrogen donor having a concentration higher than the other doping concentration peaks, and a ratio A/B of a peak concentration A of the shallowest doping concentration peak and an average peak concentration B of the other doping concentration peaks is 200 or less.