Semiconductor Doping Control via Hydrogen Ion Implantation

The patent applies preliminary action by performing a first implantation of charged particles to create lattice defects at a first depth position, followed by a second implantation of hydrogen ions that utilize these pre-created lattice defects to form hydrogen donors. This sequential approach ensures that hydrogen ions are preferentially trapped at locations where lattice defects already exist, achieving both controlled doping concentration and uniform distribution. The preliminary creation of lattice defects guides the subsequent hydrogen implantation process.

The patent applies local quality by creating a specific doping concentration distribution where a single high-concentration peak is formed at a predetermined depth position, rather than multiple peaks or uniform distribution. The charged particle implantation creates lattice defects at a first depth, and hydrogen ion implantation forms hydrogen donors at a second depth position, resulting in a controlled single peak distribution. This localized high-concentration region improves carrier mobility while maintaining precise doping control at the desired depth.

The patent converts the potentially harmful effect of lattice defects into a beneficial mechanism by deliberately creating controlled lattice defects through charged particle implantation. These lattice defects serve as trapping sites for hydrogen ions, enabling efficient hydrogen donor formation. The key is that the lattice defects are created in a controlled manner at specific depth positions, transforming what would normally be harmful defects into useful centers for hydrogen incorporation, thereby improving device performance and stability.