Semiconductor Device Hydrogen Passivation Leakage Current
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Solution Overview
Problem
As semiconductor devices become more integrated, the formation of dangling silicon bonds on substrate surfaces during etching processes leads to increased leakage current, which affects device performance and reliability.
Innovation Solution
A semiconductor device structure is developed with metal interconnections, a first hydrogen-containing layer directly contacting the interconnections, a dielectric layer forming air gaps between them, and a second hydrogen-containing layer on top, enhancing hydrogen passivation and reducing interface trap density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If etching operations are performed to create patterns, then device integration and spacing are improved, but dangling silicon bonds form causing increased leakage current
Solution Approach 1:
The patent introduces hydrogen-containing layers that release hydrogen during annealing to passivate the harmful dangling bonds created by etching. The harmful effect of etching (dangling bonds) is converted into a beneficial situation by providing hydrogen sources that heal these defects, reducing leakage current while maintaining the high integration benefits of etching operations
Solution Approach 2:
The patent applies hydrogen-containing layers and performs annealing treatment before final device operation to prevent dangling bond formation. This preliminary hydrogenation process proactively addresses the potential harm of etching by saturating dangling bonds with hydrogen atoms before they can cause leakage current issues
2Reliability
If hydrogen-containing layers are added to passivate dangling bonds, then leakage current is reduced, but device structure complexity increases
Solution Approach 1:
The dielectric layer serves multiple functions: it provides electrical insulation between metal interconnections and acts as a hydrogen source through the embedded hydrogen-containing layer. This multi-functionality reduces the need for separate hydrogenation layers, thereby limiting the increase in structural complexity while still achieving leakage current reduction
Solution Approach 2:
The patent combines the hydrogen-containing layer with the dielectric layer, merging the insulation function and hydrogen source function into a single integrated structure. This consolidation achieves passivation benefits without proportionally increasing device complexity, as the hydrogen source is embedded within an existing necessary layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves both the speed and refresh characteristics of semiconductor devices by effectively reducing leakage current through enhanced hydrogen diffusion and passivation, thereby enhancing device reliability.
Implementation Method 1
enhancing hydrogen diffusion and passivation
Implementation Method 2
effectively reducing leakage current through enhanced hydrogen diffusion and passivation
Implementation Method 3
an air gap formed between neighboring metal interconnections inside the dielectric layer
Data Source
AI summary
A semiconductor device includes: a plurality of metal interconnections spaced apart over a substrate including a lower structure; a first hydrogen-containing layer covering the plurality of the metal interconnections; a dielectric layer formed over the first hydrogen-containing layer; an air gap formed between neighboring metal interconnections inside the dielectric layer; and a second hydrogen-containing layer formed over the dielectric layer.