Semiconductor Chip Hydrogen-Permeable Connection
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Solution Overview
Problem
Radiation-emitting semiconductor chips with p-conducting nitride compound semiconductor layers often have low conductivity, making it difficult to uniformly impress an operating current into the active region, which hampers their efficiency.
Innovation Solution
A semiconductor chip design featuring a p-conducting semiconductor layer with a non-metallic connection region that is permeable to hydrogen, allowing for increased conductivity by releasing hydrogen during an activation step, and a TCO material for efficient charge carrier injection and radiation outcoupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a p-type GaN semiconductor layer is used for radiation generation, then the active region can generate radiation, but the low conductivity of the p-conducting layer makes it difficult to uniformly impress operating current
Solution Approach 1:
The patent extracts hydrogen from the p-conducting semiconductor layer through a non-metallic connection region that is permeable to hydrogen. By removing hydrogen atoms from the crystal lattice during activation, the conductivity of the p-type layer is significantly improved, enabling uniform current distribution across the active region.
Solution Approach 2:
The non-metallic connection region is designed with hydrogen permeability, creating a pathway for hydrogen extraction. This porous or permeable structure allows hydrogen to escape from the p-conducting layer during activation, thereby improving the electrical conductivity of the semiconductor layer.
2Reliability
If a non-metallic connection region permeable to hydrogen is introduced, then conductivity is improved by hydrogen release, but the device structure becomes more complex
Solution Approach 1:
The non-metallic connection region serves multiple functions simultaneously: it provides electrical connection, enables hydrogen permeation for conductivity improvement, and facilitates charge carrier injection. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity.
Solution Approach 2:
The patent combines the connection region and the hydrogen release pathway into a single integrated structure. The non-metallic connection region merges the electrical connection function with the hydrogen permeation function, simplifying the overall device architecture compared to having separate components for each function.
3Ease of operation
If TCO material is used for the non-metallic connection area, then charge carrier injection and radiation outcoupling are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes TCO materials with specific optical and electrical parameters that enable both efficient charge carrier injection and high radiation outcoupling. By selecting TCO materials with appropriate bandgap and conductivity characteristics, the design achieves improved performance while managing manufacturing requirements through material property optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances the electrical conductivity of the p-conducting semiconductor layer, improving charge carrier supply to the active region and increasing the outcoupling efficiency of radiation generated in the semiconductor chip.
Implementation Method 1
The non-metallic connection area is designed to be permeable to hydrogen. During the production of the semiconductor layer sequence, hydrogen introduced into the p-conducting semiconductor layer can escape from the p-conducting semiconductor layer on the side of the non-metallic connection region
Implementation Method 2
hydrogen introduced into the p-conducting semiconductor layer can escape from the p-conducting semiconductor layer on the side of the non-metallic connection region
Implementation Method 3
a non-metallic connection area, which is electrically conductively connected to the p-conducting semiconductor layer
Implementation Method 4
an active region ... provided for generating radiation
Data Source
Figure 1A~1B
Figure 2A~2B
Figure 3A~3B
AI summary
The invention relates to a semi-conductor chip (1) comprising a semi-conductor body provided with a semi-conductor layer sequence (10) having an active area (12) and a p-conducting semi-conductor layer (11). Said active area (12) is based, preferably, on a semi-conducting compound and is also provided, preferably for producing radiation. A non-metallic connecting area (2) is arranged on one side of the p-conducting semi-conductor layer (11) that faces away from the active area (12), said non-metallic connecting area being connected in an electrically conductive manner to the p-conducting semi-conductive layer (11). Said non-metallic connecting area (2) is permeable to hydrogen. The invention also relates to a method for producing a semi-conductor chip.