Semiconductor Device Impact Resistance Layer Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in achieving strength while reducing thickness and size, as reinforcement methods often result in increased thickness and size due to the use of reinforcement metal plates, and there is a need to prevent defects in the manufacturing process.
Innovation Solution
The implementation of impact resistance layers and impact diffusion layers, where the semiconductor integrated circuit is sandwiched between pairs of these layers, with the impact diffusion layer having a lower modulus of elasticity and higher breaking strength than the impact resistance layers, to absorb and diffuse external forces, thereby preventing damage and deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If reinforcement metal plates are used to increase chip strength, then the strength against external stress is improved, but the thickness and size of the semiconductor device increase
Solution Approach 1:
The patent changes the material parameters by using an impact resistance layer with specific mechanical properties (modulus of elasticity of 13 GPa or higher and modulus of rupture of lower than 300 MPa) instead of traditional metal plates. This parameter change allows achieving the required strength while maintaining thinner dimensions, as the organic resin-based impact resistance layer provides equivalent or superior mechanical performance with reduced thickness.
Solution Approach 2:
The patent employs composite materials by using an organic resin as the matrix and incorporating fibrous bodies (such as glass fibers, carbon fibers, or organic fibers) as reinforcement. This composite structure provides both the necessary strength against external stress and the flexibility to reduce thickness, as the fibrous reinforcement within the organic resin matrix delivers high strength-to-thickness ratio compared to solid metal plates.
2Strength
If reinforcement metal plates are used to increase chip strength, then the strength against external stress is improved, but the size of the semiconductor device increases
Solution Approach 1:
The patent changes the material parameters by using an impact resistance layer with specific mechanical properties (modulus of elasticity of 13 GPa or higher and modulus of rupture of lower than 300 MPa) instead of traditional metal plates. This parameter change allows achieving the required strength while maintaining thinner dimensions, as the organic resin-based impact resistance layer provides equivalent or superior mechanical performance with reduced thickness.
Solution Approach 2:
The patent employs composite materials by using an organic resin as the matrix and incorporating fibrous bodies (such as glass fibers, carbon fibers, or organic fibers) as reinforcement. This composite structure provides both the necessary strength against external stress and the flexibility to reduce thickness, as the fibrous reinforcement within the organic resin matrix delivers high strength-to-thickness ratio compared to solid metal plates.
3Strength
If impact diffusion layer with low modulus of elasticity and high breaking strength is used, then the ability to diffuse and absorb external force is improved, but the structural rigidity is reduced
Solution Approach 1:
The patent applies local quality by creating a layered structure where different layers have different mechanical properties. The impact diffusion layer is specifically designed with low modulus of elasticity and high breaking strength to locally absorb and diffuse impact forces, while the impact resistance layer maintains higher rigidity for overall structural support. This spatial differentiation of material properties allows the system to simultaneously achieve force diffusion capability and structural rigidity.
Solution Approach 2:
The patent employs composite materials by using an organic resin as the matrix and incorporating fibrous bodies (such as glass fibers, carbon fibers, or organic fibers) as reinforcement. This composite structure provides both the necessary strength against external stress and the flexibility to reduce thickness, as the fibrous reinforcement within the organic resin matrix delivers high strength-to-thickness ratio compared to solid metal plates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of a highly reliable semiconductor device with enhanced strength, reduced thickness, and improved manufacturing yield by effectively managing external stresses and preventing defects during the manufacturing process.
Implementation Method 1
an impact diffusion layer for diffusing the force are provided in the semiconductor device. With the impact resistance layer and the impact diffusion layer, force which is applied locally can be reduced
Implementation Method 2
As the impact resistance layer, a structure body in which a fibrous body is impregnated with an organic resin can be used
Data Source
AI summary
In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.