Semiconductor Device Inclined Surface Geometry for Optical Output
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Solution Overview
Problem
Semiconductor devices with reduced size face challenges in maintaining optical output power and luminous flux at low current densities, leading to reduced optical performance.
Innovation Solution
A semiconductor device structure is designed with specific geometrical and material configurations, including a semiconductor structure with a first and second conductive semiconductor layer, an active layer, and electrodes, where the ratio of the upper surface area to outer side surfaces and height differences are optimized to enhance optical output power and luminous flux.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of the light-emitting device is reduced, then the resolution and device density are improved, but the optical output power and luminous flux decrease at low current densities
Solution Approach 1:
The patent applies local quality by creating an inclined surface at a specific location (between first and second upper surfaces) of the semiconductor structure. This localized geometric modification concentrates light emission in a specific direction and region, improving optical output power from the active layer without increasing overall device size. The inclined surface area ratio (1:0.0005 to 1:0.01) ensures optimized light extraction locally while maintaining compact dimensions.
Solution Approach 2:
The patent introduces a third dimension by creating an inclined surface that slopes between different height levels (first and second upper surfaces). This dimensional transition allows light to be extracted at an angle rather than perpendicular to a flat surface, improving luminous flux in specific directions. The height difference ratio (1:0.6 to 1:0.95) creates a gradient structure that enhances light extraction efficiency without expanding the device footprint.
2Volume of moving object
If the size of the light-emitting device is reduced, then the device density is improved, but the luminous flux decreases at low current densities
Solution Approach 1:
The inclined surface creates a localized region with enhanced light extraction properties. By confining the inclined surface to a small area ratio (1:0.0005 to 1:0.01), the patent concentrates optical emission in a specific zone, improving luminous flux density. This local optimization allows compact devices to achieve high illumination intensity without requiring large active areas.
Solution Approach 2:
The inclined surface introduces asymmetric geometry to the otherwise symmetric semiconductor structure. The slope creates preferential light extraction in specific directions, enhancing luminous flux anisotropically. This asymmetric design allows the device to achieve higher illumination intensity in target directions while maintaining reduced overall size, resolving the contradiction between compact dimensions and luminous flux.
3Area of stationary object
If the area of outer side surfaces of the active layer is increased, then the light extraction is improved, but the carrier loss increases
Solution Approach 1:
The patent optimizes the critical parameter of inclined surface area ratio (1:0.0005 to 1:0.01) to balance light extraction and carrier loss. By precisely controlling this geometric parameter, the inclined surface provides sufficient light extraction enhancement while limiting the exposed active layer area that would otherwise cause excessive carrier loss. This parameter optimization resolves the trade-off between improved luminous flux and reduced carrier leakage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optimized structure improves optical output power and luminous flux at low current densities, enhancing the performance of small-sized semiconductor devices by controlling carrier loss and leakage current.
Implementation Method 1
A light-emitting diode (LED) is one of light-emitting devices that emit light when current is applied
Data Source
AI summary
In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.