Semiconductor Structure With Indium Layer for Defect Confinement
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Solution Overview
Problem
Semiconductor light-emitting devices face inefficiencies due to surface defects forming during high-temperature growth, which create non-radiative recombination centers, reducing light-emitting efficiency.
Innovation Solution
Incorporating an indium-containing layer between the stress release layer and the active structure, with an indium content greater than the stress release layer, to confine and combine with surface defects, thereby preventing their extension into the active structure and reducing non-radiative recombination centers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature growth process is used to form semiconductor layers, then crystal structure and material quality are improved, but surface defects form that create non-radiative recombination centers
Solution Approach 1:
An indium-containing layer is introduced as an intermediary between the stress release layer and the active structure. This intermediate layer has higher indium content than the stress release layer, creating a gradient that captures and confines surface defects generated during high-temperature growth, preventing them from extending into the active structure where they would form non-radiative recombination centers.
2Stability of the object's composition
If stress release layer is used to reduce dislocation, then structural stability is improved, but surface defects still extend into active structure reducing light-emitting efficiency
Solution Approach 1:
The patent applies local quality by creating a specific layer with localized high indium content between the stress release layer and the active structure. This localized modification targets the interface region where surface defects originate, providing defect confinement exactly where needed without altering the overall structural stability provided by the stress release layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the light-emitting efficiency of the semiconductor structure by 0.4% to 0.8% compared to devices without the indium-containing layer, while maintaining driving voltage and improving anti-ESD capability.
Implementation Method 1
the indium-containing layer is disposed between the stress release layer and the active structure, and an indium content of the indium-containing layer is greater than an indium content of the stress release structure
Data Source
AI summary
A semiconductor structure includes a first semiconductor structure having a first conductivity type, a second semiconductor structure having a second conductivity type, an active structure disposed between the first semiconductor structure and the second semiconductor structure, a stress release structure disposed between the first semiconductor structure and the active structure, and an indium-containing layer disposed between the stress release structure and the first semiconductor structure. An indium content of the indium-containing layer is greater than an indium content of the stress release structure.