Semiconductor Body Indium Gradient Layer Stack
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor bodies face challenges in efficient operation and manufacturing due to impurity incorporation and electrostatic discharge issues, particularly when using indium gallium nitride (InGaN) layers, which can lead to piezoelectric fields and increased failure rates during electrostatic charging.
Innovation Solution
A semiconductor body design featuring a layer stack with varying indium concentration along the stacking direction, formed with a single nitride compound semiconductor material, and an intermediate layer nominally free of indium, which reduces impurity incorporation and piezocharge formation by maintaining a low indium concentration, thereby enhancing operational efficiency and manufacturing simplicity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a layer stack containing indium (InGaN) is used to improve optoelectronic performance, then the semiconductor body can emit or detect electromagnetic radiation more effectively, but impurity incorporation increases and electrostatic discharge failure rates increase
Solution Approach 1:
The patent divides the semiconductor structure into distinct segments: an InGaN layer stack containing indium for optoelectronic functionality, and a GaN intermediate layer free of indium for protection against electrostatic discharge. This segmentation allows each layer to perform its specialized function without compromising the other, resolving the contradiction between optoelectronic performance and reliability.
Solution Approach 2:
The GaN intermediate layer acts as an intermediary between the InGaN layer stack and the active region. It mediates the conflicting requirements by providing a protective barrier that prevents piezoelectric field effects and electrostatic discharge from reaching the sensitive active region, while allowing the InGaN layer stack to maintain its high indium concentration for optimal optoelectronic performance.
2Use of energy by moving object
If indium concentration is increased in InGaN layers to improve light emission properties, then optoelectronic efficiency improves, but piezoelectric fields increase causing higher failure rates
Solution Approach 1:
The patent extracts the harmful piezoelectric field effects by removing indium from the intermediate layer. The GaN intermediate layer is grown without indium, thereby eliminating the source of piezoelectric fields that would otherwise affect the active region. This allows the InGaN layer stack to maintain high indium concentration for efficient light emission without transmitting harmful piezoelectric effects to the active region.
3Manufacturing precision
If multiple nitride compound semiconductor materials are used in the layer stack to control indium distribution, then impurity incorporation is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating a specific spatial distribution of materials: the InGaN layer stack contains indium for optoelectronic functionality, while the intermediate layer is locally differentiated by being free of indium. This local differentiation allows precise control over where indium is present and where it is absent, reducing impurity incorporation into the active region while maintaining manufacturing simplicity through a clear, two-material structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves the semiconductor body's efficiency and robustness by reducing impurity incorporation and electrostatic discharge failure rates, allowing for cost-effective and high-quality production while minimizing crystal defects and piezoelectric field-related issues.
Implementation Method 1
The fact that the layer stack contains indium prevents or at least reduces the undesirable incorporation and thus the concentration of impurities in the active region
Implementation Method 2
which can lead to piezoelectric fields and increased failure rates during electrostatic charging
Data Source
AI summary
A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.