III-V Semiconductor Body With Segmented Indium Gradients
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Solution Overview
Problem
Existing semiconductor bodies face challenges in achieving controlled adaptation of optical and electrical properties, particularly in p-conductive regions, due to limitations in doping concentration uniformity and segregation of p-dopant atoms during epitaxial growth.
Innovation Solution
The semiconductor body incorporates a p-conductive region with distinct sections having varying indium concentrations, allowing for precise control of p-dopant incorporation and concentration gradients, specifically using increased indium concentrations to enhance p-dopant acceptance and reduce segregation, thereby enabling high rates of change in doping profiles along the growth direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If uniform doping concentration is used in p-conductive region, then manufacturing process is simple, but optical and electrical properties cannot be precisely controlled
Solution Approach 1:
The p-conductive region is divided into multiple sections (first, second, and third sections) with different indium concentrations. This segmentation allows each section to have optimized doping characteristics, enabling precise control of optical and electrical properties while managing complexity through systematic division of the doping region.
Solution Approach 2:
Different sections of the p-conductive region are assigned different indium concentrations tailored to their specific functional requirements. The second section has higher indium concentration to reduce surface accumulation, while other sections have lower concentrations. This local quality variation enables precise control of properties in each region without requiring complex global doping strategies.
2Reliability
If p-dopant concentration is increased to improve conductivity, then electrical conductivity improves, but surface accumulation and segregation worsen
Solution Approach 1:
Indium acts as an intermediary element that facilitates p-dopant incorporation into the semiconductor lattice. By adding indium in controlled amounts (up to 1000 ppm), the patent enables higher p-dopant concentrations to be achieved without excessive surface accumulation, as indium mediates the incorporation process and reduces segregation effects.
Solution Approach 2:
The patent changes the chemical composition parameter by introducing indium into the semiconductor material. This parameter change (adding indium) fundamentally alters how p-dopant behaves during epitaxial growth, enabling improved conductivity while suppressing surface accumulation through compositional modification rather than direct doping control.
3Stability of the object's composition
If indium concentration is increased to reduce surface accumulation, then doping uniformity improves, but material composition complexity increases
Solution Approach 1:
The patent introduces indium concentration as a controllable parameter to stabilize p-dopant distribution. By systematically varying indium concentration in different sections, the patent achieves stable and uniform doping profiles. The complexity is managed by establishing clear parameter ranges (indium up to 1000 ppm, specific concentration gradients) that guide the composition control process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise adjustment of optical and electrical properties by optimizing p-dopant distribution, reducing surface accumulation, and achieving high conductivity and low radiation absorption, thus improving the performance of semiconductor components like light-emitting diodes and laser diodes.
Implementation Method 1
The sections are epitaxially grown on a carrier in a growth direction. The indium and the p-dopant are fed in a defined flow rate into the process chamber during the epitaxial growth process.
Implementation Method 2
the p-dopant functions as an electron acceptor inside the semiconductor body
Implementation Method 3
the optoelectronic component which is formed with the semiconductor body is a radiation-emitting or radiation-detecting component, for example a light-emitting diode chip or a laser diode chip
Data Source
AI summary
A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.