Semiconductor Inductor Lateral Arrangement for Breakdown Voltage

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Solution Overview

Problem

The challenge is to maintain the integrity of the semiconductor substrate while ensuring a sufficient breakdown voltage between inductors in semiconductor devices, as increasing the thickness of the insulating film to achieve this can lead to substrate warping and manufacturing issues.

Innovation Solution

The semiconductor device design includes a first and second circuit with inductors arranged laterally, ensuring a breakdown voltage without thickening the insulating film, by forming a multilayer wiring structure with interlayer insulating films that do not overlap, allowing for inductive coupling while maintaining electrical insulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the thickness of the insulating film is increased to secure the withstand voltage, then the breakdown voltage between inductors is improved, but the semiconductor substrate warps due to film stresses

Engineering Contradiction:
Improvebreakdown voltageVSAvoidsubstrate warping
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent transitions from a vertical stacking arrangement (one inductor above the other with insulating film in between) to a lateral arrangement where inductors are positioned side-by-side in the planar direction. This dimensional change allows sufficient breakdown voltage to be achieved through lateral spacing rather than increasing the vertical thickness of the insulating film, thereby preventing substrate warping while maintaining electrical insulation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent changes the spatial arrangement parameter from vertical overlay to lateral adjacency. By modifying the positional parameters of the inductors in the planar direction rather than adjusting the thickness parameter of the insulating film, the design achieves the required breakdown voltage without introducing film stress-induced warping.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the distance between inductors is increased to secure the withstand voltage, then the breakdown voltage is improved, but the area occupied by the inductors increases

Engineering Contradiction:
Improvebreakdown voltageVSAvoidinductor area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent utilizes the lateral dimension for spacing between inductors rather than requiring increased vertical separation. By arranging inductors side-by-side in the planar direction, the design achieves adequate breakdown voltage with minimal increase in overall device area, as the spacing is distributed efficiently in the available lateral space rather than requiring additional vertical layer thickness.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If the thickness of the insulating film is increased, then the electrical insulation is improved, but the semiconductor manufacturing process becomes more difficult

Engineering Contradiction:
Improveelectrical insulationVSAvoidsubstrate conveyance
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent achieves electrical insulation through lateral separation of inductors in the planar direction rather than through increased vertical thickness of insulating films. This approach maintains standard insulating film thicknesses that do not induce substrate warping, thereby preserving ease of manufacture and substrate conveyance through standard semiconductor manufacturing processes.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for effective signal transmission and reliable electrical insulation between inductors, preventing substrate warping and ensuring the semiconductor device's operational integrity without the need for increased insulating film thickness.

Implementation Method 1

an electric signal is transmitted between an inductor connected to the circuit including the power semiconductor element and the inductor connected to the circuit including the microcomputer

Methodology Applied
Scientific EffectInductive coupling: Electromagnetic Induction

Data Source

PatentUS11145597B2Semiconductor device and method of manufacturing the same
Publication Date: 2021.10.12 RENESAS ELECTRONICS CORP
  • US11145597B2 patent drawing
  • US11145597B2 patent drawing
  • US11145597B2 patent drawing

AI summary

A semiconductor device includes a first semiconductor chip on which a first circuit is formed and a second semiconductor chip on which two circuits are formed. In the first semiconductor chip, a first inductor on the transmitting side electrically connected with the first circuit and a second inductor on the receiving side electrically connected with the second circuit via the bonding wire are formed. In plan view, the first inductor and the second inductor are disposed so as not to overlap each other, and are arranged along each other.