Semiconductor Inductor Oxygen Trapping Layer Design

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Solution Overview

Problem

The integration of inductors on semiconductor chips faces challenges in preventing oxygen diffusion, which affects the reliability and performance of magnetic layers in microelectronic circuits, particularly in high-power and high-frequency applications.

Innovation Solution

A semiconductor device structure is developed with a magnetic layer, an insulative oxide layer, an oxygen trapping layer, and a cap layer, where the oxygen trapping layer is configured to trap oxygen atoms and prevent diffusion, enhancing the adhesion between layers and reducing the formation of metal oxides that can impede etching and affect performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If inductors are integrated on semiconductor chips, then electronic devices become smaller and more compact, but oxygen diffusion affects the reliability and performance of magnetic layers

Engineering Contradiction:

Improvesize of electronic deviceVSAvoidreliability of magnetic layer

Core Design Contradiction:

Volume of moving objectVSReliability

Solution Approach 1:

An oxygen trapping layer is introduced as an intermediary between the magnetic layer and the environment. This layer specifically traps oxygen atoms and prevents them from diffusing into the magnetic layer, thereby protecting the magnetic layer's reliability while maintaining the integrated inductor's compact size.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent uses a composite structure consisting of multiple layers including the magnetic layer, oxygen trapping layer, and cap layer. Each layer has specific material properties that work together to prevent oxygen diffusion while maintaining device functionality, resolving the contradiction between compact integration and magnetic layer reliability.

Inventive Principle:

Principle #40Composite materials

2Ease of manufacture

If oxygen diffusion is not prevented, then metal oxides form and impede etching processes, but preventing diffusion requires additional layers that increase device complexity

Engineering Contradiction:

Improveease of etchingVSAvoidcomplexity of layer structure

Core Design Contradiction:

Ease of manufactureVSDevice complexity

Solution Approach 1:

The oxygen trapping layer serves as a mediator that prevents oxygen from reaching the magnetic layer during manufacturing processes. This eliminates the formation of difficult-to-etch metal oxides while the layer itself is designed to be compatible with standard semiconductor manufacturing processes, minimizing the increase in device complexity.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the chemical composition parameters of the layers by introducing an oxygen trapping layer with specific material properties. This changes the oxygen concentration gradient and prevents oxide formation, improving etchability without requiring fundamentally new manufacturing processes.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If the magnetic layer is exposed to oxygen, then metal oxides form and affect inductor performance, but adding protective layers increases manufacturing steps

Engineering Contradiction:

Improveperformance of inductorVSAvoidmanufacturing efficiency

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The oxygen trapping layer is formed in advance during the manufacturing process, before the inductor is fully assembled and before oxygen exposure could occur. This preliminary protective action prevents oxide formation that would otherwise degrade inductor performance, while the layer is integrated into the standard manufacturing flow to minimize impact on productivity.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The oxygen trapping layer acts as a protective intermediary between the magnetic layer and oxygen-containing environments. It specifically traps oxygen atoms, preventing them from reacting with the magnetic layer to form performance-degrading metal oxides, thereby preserving inductor performance.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The oxygen trapping layer effectively suppresses lateral etching and prevents the generation of metal oxides, improving the thermal stability and reliability of the inductor, thereby enhancing the performance and integration of inductors in microelectronic circuits.

Implementation Method 1

an oxygen trapping layer, where the oxygen trapping layer is configured to trap oxygen atoms and prevent diffusion

Methodology Applied

Scientific EffectOxygen trapping: Absorption (physical)

Implementation Method 2

an insulative oxide layer, where the insulative oxide layer is located over the magnetic layer

Methodology Applied

Scientific EffectElectrical insulation: Dielectric

Data Source

PatentUS20170229532A1Semiconductor device and integrated inductor

Publication Date: 2017.08.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor structure includes a first magnetic layer, an insulative oxide layer, an oxygen trapping layer and a cap layer. The insulative oxide layer is over the first magnetic layer. The oxygen trapping layer is over the insulative oxide layer. The oxygen concentration of the oxygen trapping layer is less than an oxygen concentration of the insulative oxide layer. The cap layer is over the oxygen trapping layer.