Semiconductor Infrared Detector with Absorbing Gate Insulator

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Solution Overview

Problem

Far-infrared ray sensors with spatial light modulation types require complex optical mechanisms, leading to a cumbersome structure and high part counts, making them inefficient for infrared detection.

Innovation Solution

A semiconductor-based infrared detector with a source and drain region, an infrared-absorbing film as a gate insulating film, and a transparent gate electrode, which detects changes in dielectric constant due to temperature rises from infrared absorption, allowing for simpler configuration and detection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a spatial light modulation type far-infrared sensor is used, then detection capability is achieved, but the structure becomes complicated and the number of parts increases

Engineering Contradiction:

Improvedetection capabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the complex optical mechanisms from the far-infrared sensor system. By using a bolometer that directly detects infrared-induced temperature changes in a semiconductor substrate, the invention removes the need for spatial light modulation components, thereby simplifying the overall structure while maintaining detection capability.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent replaces the mechanical/optical spatial light modulation system with a direct thermal detection mechanism. The bolometer uses temperature-induced resistance changes in a semiconductor substrate to detect far-infrared radiation, substituting complex optical-mechanical systems with a simpler electrical-thermal detection approach.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Stability of the object's composition

If a bolometer with Peltier cooling is used, then temperature stability is improved, but power consumption increases and weight increases

Engineering Contradiction:

Improvetemperature stabilityVSAvoidpower consumption

Core Design Contradiction:

Stability of the object's compositionVSUse of energy by moving object

Solution Approach 1:

The patent employs a semiconductor substrate that inherently provides thermal stability through its material properties and structure. The substrate's thermal mass and conductivity naturally stabilize the operating temperature, eliminating the need for active Peltier cooling systems and their associated power consumption.

Inventive Principle:

Principle #25Self-service

Solution Approach 2:

The invention changes the thermal parameters of the detection system by using a semiconductor substrate with specific thermal properties. This substrate provides adequate thermal stability for far-infrared detection without requiring the extreme temperature control and high power consumption of Peltier-cooled bolometers.

Inventive Principle:

Principle #35Parameter changes

3Adaptability or versatility

If a solid element for photoelectric conversion is used, then detection wavelength range is improved, but cooling to liquid nitrogen temperature is necessary

Engineering Contradiction:

Improvedetection wavelength rangeVSAvoidoperating temperature

Core Design Contradiction:

Adaptability or versatilityVSTemperature

Solution Approach 1:

The patent changes the operating temperature parameter from liquid nitrogen temperatures (77K) to room temperature or near-room temperature operation. The semiconductor substrate and bolometer design enable far-infrared detection at much higher temperatures, eliminating the need for cryogenic cooling while maintaining broad wavelength detection capability.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables efficient detection of infrared rays with a simpler configuration, reducing power consumption, size, and cost, while providing improved sensitivity and durability compared to existing technologies.

Implementation Method 1

an infrared ray absorbing film as a gate insulating film formed on the semiconductor substrate

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Implementation Method 2

detecting a change in a dielectric constant caused by a temperature rise due to absorption of infrared rays

Methodology Applied

Scientific EffectDielectric permittivity: Dielectric Permittivity

Data Source

PatentUS9976910B2Infrared detector and detection method thereof, and electronic apparatus

Publication Date: 2018.05.22 SONY GROUP CORP

AI summary

An infrared detector includes a source region and a drain region which are formed on a semiconductor substrate, an infrared ray absorbing film as a gate insulating film formed on the semiconductor substrate, and a gate electrode which is formed of a transparent electrode for infrared rays on the gate insulating film, in which, when a predetermined voltage is applied to the gate electrode, a predetermined current flows between the source region and the drain region.